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1. (WO2018009156) RRAM DEVICES AND THEIR METHODS OF FABRICATION

Pub. No.:    WO/2018/009156    International Application No.:    PCT/US2016/040889
Publication Date: Fri Jan 12 00:59:59 CET 2018 International Filing Date: Sun Jul 03 01:59:59 CEST 2016
IPC: H01L 45/00
Applicants: INTEL CORPORATION
Inventors: CLARKE, James S.
PILLARISETTY, Ravi
SHAH, Uday
INDUKURI, Tejaswi K.
MUKHERJEE, Niloy
KARPOV, Elijah V.
MAJHI, Prashant
Title: RRAM DEVICES AND THEIR METHODS OF FABRICATION
Abstract:
Embodiments of the present invention include RRAM devices and their methods of fabrication. In an embodiment, a resistive random access memory (RRAM) cell includes a conductive interconnect disposed in a dielectric layer above a substrate. An RRAM device is coupled to the conductive interconnect. An RRAM memory includes a bottom electrode disposed above the conductive interconnect and on a portion of the dielectric layer. A conductive layer is formed on the bottom electrode layer. The conductive layer is separate and distinct from the bottom electrode layer. The conductive layer further includes a material that is different from the bottom electrode layer. A switching layer is formed on the conductive layer. An oxygen exchange layer is formed on the switching layer and a top electrode is formed on the oxygen exchange layer.