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1. (WO2018008651) PIEZOELECTRIC FILM, METHOD FOR PRODUCING SAME AND PIEZOELECTRIC COMPONENT USING PIEZOELECTRIC FILM
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.:    WO/2018/008651    International Application No.:    PCT/JP2017/024547
Publication Date: 11.01.2018 International Filing Date: 04.07.2017
IPC:
H01L 41/187 (2006.01), C23C 14/06 (2006.01), C23C 14/34 (2006.01), H01L 41/113 (2006.01), H01L 41/316 (2013.01), H03H 3/02 (2006.01), H03H 9/17 (2006.01), C01B 21/06 (2006.01)
Applicants: MURATA MANUFACTURING CO., LTD. [JP/JP]; 10-1, Higashikotari 1-chome, Nagaokakyo-shi, Kyoto 6178555 (JP).
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY [JP/JP]; 3-1, Kasumigaseki 1-chome, Chiyoda-ku, Tokyo 1008921 (JP)
Inventors: MIZUNO, Takaaki; (JP).
UMEDA, Keiichi; (JP).
HONDA, Atsushi; (JP).
AIDA, Yasuhiro; (JP).
UEHARA, Masato; (JP).
AKIYAMA, Morito; (JP).
NAGASE, Toshimi; (JP).
YAMADA, Hiroshi; (JP)
Agent: INABA, Yoshiyuki; (JP).
ONUKI, Toshifumi; (JP)
Priority Data:
2016-133556 05.07.2016 JP
Title (EN) PIEZOELECTRIC FILM, METHOD FOR PRODUCING SAME AND PIEZOELECTRIC COMPONENT USING PIEZOELECTRIC FILM
(FR) FILM PIÉZOÉLECTRIQUE, SON PROCÉDÉ DE PRODUCTION ET COMPOSANT PIÉZOÉLECTRIQUE UTILISANT UN FILM PIÉZOÉLECTRIQUE
(JA) 圧電膜及びその製造方法並びに圧電膜を用いた圧電部品
Abstract: front page image
(EN)The present invention improves the piezoelectric constant of a GaN piezoelectric film. A piezoelectric film which is formed of a gallium nitride crystal having a wurtzite structure, and wherein the gallium nitride crystal contains at least one trivalent transition metal element, while having a structure in which some of the gallium atoms in the gallium nitride crystal are substituted by the trivalent transition metal element.
(FR)La présente invention améliore la constante piézoélectrique d'un film piézoélectrique de GaN. L'invention porte sur un film piézoélectrique qui est constitué d'un cristal de nitrure de gallium ayant une structure de wurtzite, le cristal de nitrure de gallium contenant au moins un élément de métal de transition trivalent, tout en ayant une structure dans laquelle certains des atomes de gallium dans le cristal de nitrure de gallium sont substitués par l'élément de métal de transition trivalent.
(JA)GaN圧電膜において、圧電定数を向上させる。 ウルツ鉱構造を有する窒化ガリウム結晶からなる圧電膜であって、窒化ガリウム結晶は、3価の遷移金属元素のうち少なくともいずれかを含み、窒化ガリウム結晶中における一部のガリウム原子が3価の遷移金属元素に置換された構造を有する。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)