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1. (WO2018008642) SILICON COMPOUND MATERIAL PRODUCTION METHOD AND SILICON COMPOUND MATERIAL PRODUCTION DEVICE

Pub. No.:    WO/2018/008642    International Application No.:    PCT/JP2017/024511
Publication Date: Fri Jan 12 00:59:59 CET 2018 International Filing Date: Wed Jul 05 01:59:59 CEST 2017
IPC: C01B 32/977
C01B 33/107
C04B 35/565
C23C 16/42
Applicants: IHI CORPORATION
株式会社IHI
THE UNIVERSITY OF TOKYO
国立大学法人 東京大学
Inventors: FUKUSHIMA, Yasuyuki
福島 康之
AKAZAKI, Kozue
赤崎 梢
TANAKA, Yasutomo
田中 康智
AKIKUBO, Kazuma
秋久保 一馬
NAKAMURA, Takeshi
中村 武志
SHIMOGAKI, Yukihiro
霜垣 幸浩
MOMOSE, Takeshi
百瀬 健
SATO, Noboru
佐藤 登
SHIMA, Kohei
嶋 紘平
FUNATO, Yuichi
舩門 佑一
Title: SILICON COMPOUND MATERIAL PRODUCTION METHOD AND SILICON COMPOUND MATERIAL PRODUCTION DEVICE
Abstract:
The silicon compound material production method according to the present invention comprises steps for: housing a preform of silicon carbide in a reaction furnace; impregnating the preform with silicon carbide by supplying a source gas containing methyltrichlorosilane into the reaction furnace; and reducing the generation of a gas-derived liquid or solid by-product by performing control so as to cause the temperature of the gas discharged from the reaction furnace to drop at a prescribed rate and by imparting a continuous thermal history to the gas.