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1. (WO2018008512) DEFECT DETECTION DEVICE, DEFECT DETECTION METHOD, WAFER, SEMICONDUCTOR CHIP, SEMICONDUCTOR DEVICE, DIE BONDER, BONDING METHOD, SEMICONDUCTOR MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

Pub. No.:    WO/2018/008512    International Application No.:    PCT/JP2017/023932
Publication Date: Fri Jan 12 00:59:59 CET 2018 International Filing Date: Fri Jun 30 01:59:59 CEST 2017
IPC: G01N 21/956
H01L 21/301
H01L 21/52
H01L 21/66
Applicants: CANON MACHINERY INC.
キヤノンマシナリー株式会社
Inventors: TAI Haruka
田井 悠
KAMBAYASHI Atsumasa
上林 篤正
Title: DEFECT DETECTION DEVICE, DEFECT DETECTION METHOD, WAFER, SEMICONDUCTOR CHIP, SEMICONDUCTOR DEVICE, DIE BONDER, BONDING METHOD, SEMICONDUCTOR MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Abstract:
This defect detection device detects a defect formed in a covering layer in a workpiece provided with a light and dark layer having a light and dark pattern, and the covering layer covering the light and dark pattern of the light and dark layer. Illumination light emitted from an illuminator has a wavelength at which the intensity of light that is reflected or scattered from the covering layer and is incident on an imaging device is higher than that of light that is reflected from at least the light and dark layer and is incident on the imaging device. Therefore, the illumination light reduces the influence of the light and dark pattern of the light and dark layer.