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1. (WO2018007729) DEVICE FOR GROWING A FLAT SINGLE CRYSTAL FROM A SEED CRYSTAL IN A CRYSTALLIZATION SOLUTION AND PROCESS FOR MANUFACTURING THIS SINGLE CRYSTAL
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Pub. No.: WO/2018/007729 International Application No.: PCT/FR2017/051774
Publication Date: 11.01.2018 International Filing Date: 30.06.2017
Chapter 2 Demand Filed: 29.01.2018
IPC:
C30B 7/08 (2006.01) ,C30B 29/22 (2006.01) ,C30B 7/14 (2006.01)
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
7
Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
08
by cooling of the solution
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10
Inorganic compounds or compositions
16
Oxides
22
Complex oxides
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
7
Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
14
the crystallising materials being formed by chemical reactions in the solution
Applicants:
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES [FR/FR]; Bat le Ponant 25 rue Leblanc 75015 Paris, FR
Inventors:
VISSIE, Pascal; FR
GROSIL, Max; FR
PINTAULT, Bruno; FR
Agent:
GUERRE, Fabien; FR
Priority Data:
16 5637904.07.2016FR
Title (EN) DEVICE FOR GROWING A FLAT SINGLE CRYSTAL FROM A SEED CRYSTAL IN A CRYSTALLIZATION SOLUTION AND PROCESS FOR MANUFACTURING THIS SINGLE CRYSTAL
(FR) DISPOSITIF DE CROISSANCE D'UN MONOCRISTAL PLAN À PARTIR D'UN GERME CRISTALLIN DANS UNE SOLUTION DE CRISTALLISATION ET PROCÉDÉ DE FABRICATION DE CE MONOCRISTAL
Abstract:
(EN) The invention relates to a device for growing a flat single crystal from a seed in a crystallization solution. It comprises: a support element having a support face; a blocking element comprising a blocking face, positioned at a predefined distance from the support face in order to block the growth of the single crystal in a direction perpendicular to the support face; a seed protection member, configured to protect the seed during a crystallization solution treatment phase and to free a growth zone positioned between the support face and the blocking face during a rotation of the support element; the blocking element additionally comprises a holding member that cooperates with the protection member, the holding member being movable between a first position where it holds the protection member against the support face during the treatment phase and a second position where the holding member is detached from the protection member and participates in the formation of the blocking face.
(FR) L'invention concerne un dispositif de croissance d'un monocristal plan à partir d'un germe dans une solution de cristallisation. Il comprend: un élément de support ayant une face de support; un élément de blocage comprenant une face de blocage, disposée à une distance prédéfinie de la face de support pour bloquer la croissance du monocristal dans une direction perpendiculaire à la face de support; un organe de protection du germe, configuré pour protéger le germe pendant une phase de traitement de la solution de cristallisation et pour libérer une zone de croissance disposée entre la face de support et la face de blocage lors d'une mise en rotation de l'élément de support; l'élément de blocage comporte en outre un organe de maintien coopérant avec l'organe de protection, l'organe de maintien étant déplaçable entre une première position où il maintient l'organe de protection contre la face de support pendant la phase de traitement et une deuxième position où l'organe de maintien est désolidarisé de l'organe de protection et participe à la formation de la face de blocage.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: French (FR)
Filing Language: French (FR)