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1. WO2018007529 - METHOD FOR MANUFACTURING A PHOTOSENSOR COMPRISING A STACK OF LAYERS PLACED ON TOP OF EACH OTHER

Publication Number WO/2018/007529
Publication Date 11.01.2018
International Application No. PCT/EP2017/066951
International Filing Date 06.07.2017
IPC
H01L 27/146 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
CPC
H01L 27/14636
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14636Interconnect structures
H01L 27/1465
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14643Photodiode arrays; MOS imagers
14649Infra-red imagers
1465of the hybrid type
H01L 27/14669
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14665Imagers using a photoconductor layer
14669Infra-red imagers
H01L 27/1467
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14665Imagers using a photoconductor layer
14669Infra-red imagers
1467of the hybrid type
H01L 27/14689
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14683Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
14689MOS based technologies
H01L 27/1469
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14683Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
1469Assemblies, i.e. hybrid integration
Applicants
  • THALES [FR]/[FR]
  • COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES [FR]/[FR]
Inventors
  • REVERCHON, Jean-Luc
  • EVIRGEN, Axel
  • LE GOFF, Florian
Agents
  • COLOMBIE, Damien
  • BLOT, Philippe
  • DOMENEGO, Bertrand
  • HABASQUE, Etienne
  • HOLTZ, Béatrice
  • NEYRET, Daniel
Priority Data
16 0106608.07.2016FR
Publication Language French (FR)
Filing Language French (FR)
Designated States
Title
(EN) METHOD FOR MANUFACTURING A PHOTOSENSOR COMPRISING A STACK OF LAYERS PLACED ON TOP OF EACH OTHER
(FR) PROCÉDÉ DE FABRICATION DE PHOTODÉTECTEUR COMPRENANT UN EMPILEMENT DE COUCHES SUPERPOSÉES
Abstract
(EN)
The invention relates to a method for manufacturing a photosensor which is able to operate so as to optically detect infrared electromagnetic waves and comprises a stack of thin layers that are placed on top of each other. The disclosed method involves obtaining a first assembly (E1) of stacked layers which forms a detection assembly and which includes a first substrate layer, a photoabsorption layer, a barrier layer and at least one contact layer, and obtaining a second assembly (E2) of stacked layers that forms a reading circuit and includes at least one second substrate layer and a multiplexing layer. The first and second assemblies are glued together between the contact layer of the first assembly and the multiplexing layer of the second assembly. An etching process through the second assembly makes it possible to create a plurality of interconnecting vias, whereupon regions on the first contact layer of the first assembly are p-doped or n-doped through the interconnecting vias.
(FR)
L'invention concerne un procédé de fabrication de photodétecteur apte à fonctionner pour la photodétection d'ondes électromagnétiques infrarouges, comprenant un empilement de couches minces superposées. Le procédé comporte l'obtention d'un premier ensemble (E1) de couches empilées, formant un ensemble de détection, comprenant une première couche de substrat, une couche photo-absorbante, une couche barrière et au moins une couche de contact, et d'un deuxième ensemble (E2) de couches empilées formant un circuit de lecture, comprenant au moins une deuxième couche de substrat et une couche de multiplexage. Les premier et deuxième ensembles sont collés entre la couche de contact du premier ensemble et la couche de multiplexage du deuxième ensemble. Une gravure à travers le deuxième ensemble permet d'obtenir une pluralité de vias d'interconnexion, puis un dopage p ou n de zones de la première couche de contact du premier ensemble est réalisé à travers les vias d'interconnexion.
Latest bibliographic data on file with the International Bureau