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Pub. No.:    WO/2018/006283    International Application No.:    PCT/CN2016/088754
Publication Date: 11.01.2018 International Filing Date: 06.07.2016
H01L 21/67 (2006.01)
Applicants: ACM RESEARCH (SHANGHAI) INC. [CN/CN]; Bld. 4, No. 1690 Cailun Road, Zhangjiang High-tech Park Shanghai 201203 (CN)
Inventors: CHEN, Fufa; (CN).
FANG, Zhiyou; (CN).
WU, Jun; (CN).
WANG, Hui; (CN).
CHEN, Fuping; (CN).
WANG, Wenjun; (CN)
Agent: SHANGHAI PATENT & TRADEMARK LAW OFFICE, LLC; 435 Guiping Road Shanghai 200233 (CN)
Priority Data:
Abstract: front page image
(EN)A substrate supporting apparatus (300) for cleaning a back side of a substrate (107) is provided. The substrate supporting apparatus (300) has a hollow shaft (319) and a rotary spindle (303). The rotary spindle (303) is set in the hollow shaft (319) and a spacing is formed between an outer wall of the rotary spindle (303) and an inner wall of the hollow shaft (319). The outer wall of the rotary spindle (303) defines a blocking wall (322) and a recess (324) to prevent particles in the spacing from entering a gas groove (325) which is formed on the hollow shaft (319) and supplies gas to a front side of the substrate (107), avoiding the particles contaminating the front side of the substrate (107), which improves the quality of semiconductor devices.
(FR)L'invention concerne un appareil de support de substrat (300) permettant de nettoyer un côté arrière d'un substrat (107). L'appareil de support de substrat (300) comporte un arbre creux (319) et une broche rotative (303). La broche rotative (303) est placée dans l'arbre creux (319) et un espacement est formé entre une paroi extérieure de la broche rotative (303) et une paroi intérieure de l'arbre creux (319). La paroi extérieure de la broche rotative (303) définit une paroi de blocage (322) et un creux (324) destiné à empêcher des particules dans l'espacement d'entrer dans une rainure à gaz (325) qui est formée sur l'arbre creux (319) et fournit du gaz à un côté avant du substrat (107), ce qui évite que les particules contaminent le côté avant du substrat (107), ce qui améliore la qualité de dispositifs à semi-conducteurs.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)