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1. (WO2018005286) LED STRUCTURES FOR REDUCED NON-RADIATIVE SIDEWALL RECOMBINATION
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.:    WO/2018/005286    International Application No.:    PCT/US2017/039038
Publication Date: 04.01.2018 International Filing Date: 23.06.2017
IPC:
H01L 33/14 (2010.01), H01L 33/20 (2010.01)
Applicants: APPLE INC. [US/US]; 1 Infinite Loop Cupertino, California 95014 (US)
Inventors: BOUR, David P.; (US).
MCGRODDY, Kelly; (US).
HAEGER, Daniel Arthur; (US).
PERKINS, James Michael; (US).
CHAKRABORTY, Arpan; (US).
DROLET, Jean-Jacques P.; (US).
SIZOV, Dmitry S.; (US)
Agent: AIKIN, Jacob, T.; (US)
Priority Data:
15/199,803 30.06.2016 US
15/444,218 27.02.2017 US
Title (EN) LED STRUCTURES FOR REDUCED NON-RADIATIVE SIDEWALL RECOMBINATION
(FR) STRUCTURES À DEL SERVANT À RÉDUIRE LA RECOMBINAISON NON RADIATIVE AU NIVEAU DE PAROIS LATÉRALES
Abstract: front page image
(EN)LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
(FR)L'invention concerne des structures à DEL servant à réduire la recombinaison non radiative le long de parois latérales de DEL verticales comprenant des parois latérales de diode p-n qui s'étendent sur une couche d'étalement de courant supérieure, sur une couche d'étalement de courant inférieure, et sur une couche active située entre la couche d'étalement de courant supérieure et la couche d'étalement de courant inférieure.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)