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1. (WO2018004998) WRITING TO CROSS-POINT NON-VOLATILE MEMORY
Latest bibliographic data on file with the International BureauSubmit observation

Pub. No.: WO/2018/004998 International Application No.: PCT/US2017/035762
Publication Date: 04.01.2018 International Filing Date: 02.06.2017
IPC:
G11C 11/22 (2006.01) ,G11C 11/56 (2006.01) ,G11C 14/00 (2006.01) ,H01L 27/11507 (2017.01) ,H01L 27/11502 (2017.01)
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
11
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
21
using electric elements
22
using ferroelectric elements
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
11
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
56
using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
14
Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
[IPC code unknown for ERROR IPC Code incorrect: invalid subgroup (0=>999999)!][IPC code unknown for ERROR IPC Code incorrect: invalid subgroup (0=>999999)!]
Applicants:
MICRON TECHNOLOGY, INC. [US/US]; 8000 S. Federal Way Boise, Idaho 83716-9632, US
Inventors:
WANG, Bei; US
CALDERONI, Alessandro; US
KINNEY, Wayne; US
JOHNSON, Adam; US
RAMASWAMY, Durai Vishak Nirmal; US
Agent:
HARRIS, Philip W.; US
Priority Data:
15/197,41629.06.2016US
Title (EN) WRITING TO CROSS-POINT NON-VOLATILE MEMORY
(FR) ÉCRITURE DANS UNE MÉMOIRE NON VOLATILE À POINTS DE CROISEMENT
Abstract:
(EN) Methods, systems, and devices for preventing disturb of untargeted memory cells during repeated access operations of target memory cells are described for a non-volatile memory array. Multiple memory cells may be in electronic communication with a common conductive line, and each memory ceil may have an electrically non-linear selection component. Following an access operation (e.g., a read or write operation) of a target memory cell, untargeted memory cells may be discharged by applying a discharge voltage to the common conductive line. The discharge voltage may, for example, have a polarity opposite to the access voltage. In other examples, a delay may be instituted between access attempts in order to discharge the untargeted memory cells.
(FR) L'invention porte sur des procédés, des systèmes et des dispositifs destinés à un réseau de mémoire non volatile et permettant d'empêcher la perturbation de cellules de mémoire non ciblées pendant des opérations d'accès répétées de cellules de mémoire cibles. De multiples cellules de mémoire peuvent être en communication électronique avec une ligne conductrice commune, et chaque cellule de mémoire peut avoir un composant de sélection électriquement non linéaire. Après une opération d'accès (par ex., une opération de lecture ou d'écriture) d'une cellule de mémoire cible, des cellules de mémoire non ciblées peuvent être déchargées par application d'une tension de décharge à la ligne conductrice commune. La tension de décharge peut, par exemple, présenter une polarité opposée à la tension d'accès. Dans d'autres exemples, un retard peut être établi entre des tentatives d'accès afin de décharger les cellules de mémoire non ciblées.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
SG11201811061UKR1020190020824CN109564764EP3479381