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1. (WO2018004840) WITHIN-DIE SPECIAL OSCILLATOR FOR TRACKING SRAM MEMORY PERFORMANCE WITH GLOBAL PROCESS VARIATION, VOLTAGE AND TEMPERATURE

Pub. No.:    WO/2018/004840    International Application No.:    PCT/US2017/032232
Publication Date: Fri Jan 05 00:59:59 CET 2018 International Filing Date: Fri May 12 01:59:59 CEST 2017
IPC: G11C 5/14
G11C 7/04
G11C 7/22
G11C 11/417
G06F 1/32
Applicants: QUALCOMM INCORPORATED
Inventors: MARFATIA, Percy Tehmul
NARAYANAN, Rajagopal
HU, Shih-Hsin Jason
CHEN, Nan
Title: WITHIN-DIE SPECIAL OSCILLATOR FOR TRACKING SRAM MEMORY PERFORMANCE WITH GLOBAL PROCESS VARIATION, VOLTAGE AND TEMPERATURE
Abstract:
An apparatus includes a memory, a timing circuit configured to emulate a first operation of the memory to activate a second operation of the memory, a sensor configured to emulate a portion of the timing circuit, and a controller configured to adjust an operating parameter of the memory based on the sensor emulating the portion of the timing circuit. A method is presented. The method includes at least operating a timing circuit to emulate a first operation of the memory, activating a second operation of the memory based on the emulating the first operation of the memory, emulating, by a sensor, a portion of the timing circuit. Another apparatus is presented. The apparatus includes at least a memory, a timing circuit, and means for tracking a performance of the memory based on the timing circuit tracking a memory operation.