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|1. (WO2018004667) TWO TRANSISTOR MEMORY CELL USING HIGH MOBILITY METAL OXIDE SEMICONDUCTORS|
|Inventors:||LE, Van H.
DEWEY, Gilbert William
KAVALIEROS, Jack T.
|Title:||TWO TRANSISTOR MEMORY CELL USING HIGH MOBILITY METAL OXIDE SEMICONDUCTORS|
A two transistor memory cell is described that uses high mobility amorphous oxide semiconductors. In one example, a sensing transistor has a source and a drain in a first metal layer and a gate between the source and the drain. The gate has a channel formed of a metal oxide semiconductor. A charging transistor has a source and a drain in a second metal layer and a gate channel also formed of metal oxide semiconductor, wherein the source of the charging transistor is coupled to the gate of the sensing transistor, and a gate electrode in a third metal layer is coupled to the gate of the charging transistor.