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1. (WO2018004652) FRONT-END TUNNEL JUNCTION DEVICE PLUS BACK-END TRANSISTOR DEVICE

Pub. No.:    WO/2018/004652    International Application No.:    PCT/US2016/040686
Publication Date: Fri Jan 05 00:59:59 CET 2018 International Filing Date: Sat Jul 02 01:59:59 CEST 2016
IPC: H01L 29/73
H01L 29/78
H01L 21/8238
Applicants: INTEL CORPORATION
Inventors: KUO, Charles C.
OGUZ, Kaan
DOCZY, Mark L.
DOYLE, Brian S.
O'BRIEN, Kevin P.
Title: FRONT-END TUNNEL JUNCTION DEVICE PLUS BACK-END TRANSISTOR DEVICE
Abstract:
Techniques are disclosed for forming an integrated circuit (IC) including a front-end tunnel junction device plus a back-end transistor or transistor-based device. For ease of reference, the combination of the two devices may be referred to herein as a "1T-1TJ" configuration, where the "1T" portion represents the back-end transistor or transistor-based device and the "1TJ" portion represents the front-end tunnel junction device. As will be apparent in light of this disclosure, in some embodiments, 1T-1TJ configuration can be used for memory applications, where the front-end tunnel junction device can be used as the switching element to store data (e.g., a '1' or '0') and the back-end transistor or transistor-based device can be used to write and/or read the tunnel junction switching element. Benefits can be derived from forming the tunnel junction device during front-end IC processing. Other embodiments may be described and/or disclosed.