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1. (WO2018004651) CAPACITOR INCLUDING MULTILAYER DIELECTRIC STACK

Pub. No.:    WO/2018/004651    International Application No.:    PCT/US2016/040684
Publication Date: Fri Jan 05 00:59:59 CET 2018 International Filing Date: Sat Jul 02 01:59:59 CEST 2016
IPC: H01L 49/02
H01L 21/768
H01L 27/08
Applicants: INTEL CORPORATION
Inventors: THEN, Han Wui
DASGUPTA, Sansaptak
RADOSAVLJEVIC, Marko
Title: CAPACITOR INCLUDING MULTILAYER DIELECTRIC STACK
Abstract:
Techniques are disclosed for forming an integrated circuit including a capacitor having a multilayer dielectric stack. For example, the capacitor may be a metal-insulator-metal capacitor (MIMcap), where the stack of dielectric layers is used for the insulator or 'I' portion of the MIM structure. In some cases, the composite or multilayer stack for the insulator portion of the MIM structure may include a first oxide layer, a dielectric layer, a second oxide layer, and a high-k dielectric layer, as will be apparent in light of this disclosure. Further, the multilayer dielectric stack may include an additional high-k dielectric layer, for example. Use of such multilayer dielectric stacks can enable increases in capacitance density and/or breakdown voltage for a MIMcap device. Further, use of a multilayer dielectric stack can enable tuning of the breakdown and capacitance characteristics as desired. Other embodiments may be described and/or disclosed.