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1. (WO2018004625) CONDUCTIVE BRIDGE RANDOM ACCESS MEMORY (CBRAM) DEVICES WITH ENGINEERED SIDEWALLS FOR FILAMENT LOCALIZATION

Pub. No.:    WO/2018/004625    International Application No.:    PCT/US2016/040551
Publication Date: Fri Jan 05 00:59:59 CET 2018 International Filing Date: Fri Jul 01 01:59:59 CEST 2016
IPC: H01L 45/00
Applicants: INTEL CORPORATION
Inventors: MAJHI, Prashant
KARPOV, Elijah V.
SHAH, Uday
PILLARISETTY, Ravi
MUKHERJEE, Niloy
BIELEFELD, Jeffery D.
INDUKURI, Tejaswi K.
CLARKE, James S.
Title: CONDUCTIVE BRIDGE RANDOM ACCESS MEMORY (CBRAM) DEVICES WITH ENGINEERED SIDEWALLS FOR FILAMENT LOCALIZATION
Abstract:
Approaches for fabricating conductive bridge random access memory (CBRAM) devices with engineered sidewalls for filament localization, and the resulting structures and devices, are described. In an example, a conductive bridge random access memory (CBRAM) device includes a conductive interconnect disposed in an inter-layer dielectric (ILD) layer disposed above a substrate. The CBRAM device also includes a CBRAM element disposed on the conductive interconnect. The CBRAM element includes a first electrode layer disposed on the uppermost surface of the conductive interconnect. A resistance switching layer is disposed on the first electrode layer. The resistance switching layer includes an electrolyte material having doped regions at outermost ends of the electrolyte material but not in a central portion of the electrolyte material. A metal ion source layer is disposed on the resistance switching layer. A second electrode layer is disposed on the metal ion source layer.