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1. (WO2018004510) GROUP III-N MATERIAL CONDUCTIVE SHIELD FOR HIGH FREQUENCY METAL INTERCONNECTS
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2018/004510 International Application No.: PCT/US2016/039522
Publication Date: 04.01.2018 International Filing Date: 27.06.2016
IPC:
H01L 27/02 (2006.01) ,H01L 21/768 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71
Manufacture of specific parts of devices defined in group H01L21/7086
768
Applying interconnections to be used for carrying current between separate components within a device
Applicants:
INTEL CORPORATION [US/US]; 2200 Mission College Boulevard Santa Clara, California 95054, US
Inventors:
THEN, Han Wui; US
DASGUPTA, Sansaptak; US
RADOSAVLJEVIC, Marko; US
Agent:
MALONEY, Neil F.; US
Priority Data:
Title (EN) GROUP III-N MATERIAL CONDUCTIVE SHIELD FOR HIGH FREQUENCY METAL INTERCONNECTS
(FR) BLINDAGE CONDUCTEUR EN MATÉRIAU DU GROUPE III-N POUR INTERCONNEXIONS MÉTALLIQUES À HAUTE FRÉQUENCE
Abstract:
(EN) Integrated circuit structures configured with low loss transmission lines are disclosed. The structures are implemented with group III-nitride (III-N) semiconductor materials, and are well-suited for use in radio frequency (RF) applications where high frequency signal loss is a concern. The III-N materials are effectively used as a conductive ground shield between a transmission line and the underlying substrate, so as to significantly suppress electromagnetic field penetration at the substrate. In an embodiment, a group III-N polarization layer is provided over a gallium nitride layer, and an n-type doped layer of indium gallium nitride (InzGa1-zN) is provided over or adjacent to the polarization layer, wherein z is in the range of 0.0 to 1.0. In addition to providing transmission line ground shielding in some locations, the III-N materials can also be used to form one or more active and/or passive components (e.g., power amplifier, RF switch, RF filter, RF diode, etc).
(FR) L'invention concerne des structures de circuit intégré configurées avec des lignes de transmission à faibles pertes. Les structures sont mises en œuvre avec des matériaux semiconducteurs de nitrure du groupe III (III-N) et sont bien adaptées à une utilisation dans des applications en radiofréquence (RF) où les pertes du signal à haute fréquence constituent un problème. Les matériaux III-N sont utilisés efficacement comme blindage de masse conducteur entre une ligne de transmission et le substrat sous-jacent, de manière à supprimer considérablement la pénétration du champ électromagnétique au niveau du substrat. Dans un mode de réalisation, une couche de polarisation du groupe III-N est disposée au-dessus d'une couche de nitrure de gallium, et une couche dopée de type N en nitrure de gallium d'indium (InzGa1-zN) est disposée au-dessus ou à côté de la couche de polarisation, avec z compris entre 0,0 et 1,0. En plus de la réalisation d'un blindage de masse pour la ligne de transmission à certains endroits, les matériaux III-N peuvent également être utilisés pour former un ou plusieurs composants actifs et/ou passifs (par exemple un amplificateur de puissance, un commutateur RF, un filtre RF, une diode RF, etc.).
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
US20190181099