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1. (WO2018004510) GROUP III-N MATERIAL CONDUCTIVE SHIELD FOR HIGH FREQUENCY METAL INTERCONNECTS

Pub. No.:    WO/2018/004510    International Application No.:    PCT/US2016/039522
Publication Date: Fri Jan 05 00:59:59 CET 2018 International Filing Date: Tue Jun 28 01:59:59 CEST 2016
IPC: H01L 27/02
H01L 21/768
Applicants: INTEL CORPORATION
Inventors: THEN, Han Wui
DASGUPTA, Sansaptak
RADOSAVLJEVIC, Marko
Title: GROUP III-N MATERIAL CONDUCTIVE SHIELD FOR HIGH FREQUENCY METAL INTERCONNECTS
Abstract:
Integrated circuit structures configured with low loss transmission lines are disclosed. The structures are implemented with group III-nitride (III-N) semiconductor materials, and are well-suited for use in radio frequency (RF) applications where high frequency signal loss is a concern. The III-N materials are effectively used as a conductive ground shield between a transmission line and the underlying substrate, so as to significantly suppress electromagnetic field penetration at the substrate. In an embodiment, a group III-N polarization layer is provided over a gallium nitride layer, and an n-type doped layer of indium gallium nitride (InzGa1-zN) is provided over or adjacent to the polarization layer, wherein z is in the range of 0.0 to 1.0. In addition to providing transmission line ground shielding in some locations, the III-N materials can also be used to form one or more active and/or passive components (e.g., power amplifier, RF switch, RF filter, RF diode, etc).