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1. (WO2018004259) METHOD FOR MANUFACTURING ION-CONDUCTING FILM
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/004259 International Application No.: PCT/KR2017/006850
Publication Date: 04.01.2018 International Filing Date: 28.06.2017
IPC:
C01B 21/097 (2006.01) ,C01D 15/00 (2006.01) ,H01G 11/56 (2013.01) ,H01M 10/0525 (2010.01) ,B05D 1/00 (2006.01) ,B05D 1/02 (2006.01) ,B05D 1/26 (2006.01) ,B05D 3/02 (2006.01) ,B05D 7/24 (2006.01)
Applicants: CHUNGANG UNIVERSITY INDUSTRY ACADEMIC COOPERATION FOUNDATION[KR/KR]; 84, Heukseok-ro Dongjak-gu Seoul 06974, KR
Inventors: KIM, Myung Gil; KR
YU, Seung Woo; KR
Agent: NAM, Gun Pil; KR
CHA, Sang Yun; KR
PARK, Jong Soo; KR
Priority Data:
10-2016-008249030.06.2016KR
Title (EN) METHOD FOR MANUFACTURING ION-CONDUCTING FILM
(FR) PROCÉDÉ DE FABRICATION D'UNE MEMBRANE CONDUCTRICE D'IONS
(KO) 이온전도성 막의 제조 방법
Abstract:
(EN) A method for manufacturing an ion-conducting film of the present invention comprises the steps of: preparing a precursor solution containing a framework compound comprising a single bond or a double bond between phosphorus (P) and nitrogen (N), a metal salt compound and an organic solvent; forming a precursor film on a base substrate using the precursor solution through a solution process under non-vacuum conditions; and heat-treating the precursor film to form a coating film containing metal-phosphorus-oxynitride.
(FR) Un procédé de fabrication d'une membrane conductrice d'ions selon la présente invention comprend les étapes consistant à : préparer une solution précurseur contenant un composé de structure comprenant une liaison simple ou une double liaison entre du phosphore (P) et de l'azote (N), un composé de sel métallique et un solvant organique; former une membrane précurseur sur un substrat de base à l'aide de la solution de précurseur grâce à un procédé en solution dans des conditions de non-vide; et traiter thermiquement la membrane précurseur pour former un film de revêtement contenant de l'oxynitrure de phosphore-métal.
(KO) 본 발명의 이온전도성 막의 제조 방법은 인(P)과 질소(N) 사이의 단일결합 또는 이중결합을 포함하는 골격 화합물, 금속염 화합물 및 유기 용매를 포함하는 전구체 용액을 준비하는 단계, 전구체 용액을 비진공 조건에서 용액 공정을 이용하여 베이스 기재 상에 전구체막을 형성하는 단계 및 전구체막을 열처리하여 금속-인-산화질화물을 포함하는 코팅막을 형성하는 단계를 갖는다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)