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1. WO2018004074 - CONSTANT TRANSCONDUCTANCE CURRENT SOURCE AND OPERATIONAL AMPLIFIER USING SAME

Publication Number WO/2018/004074
Publication Date 04.01.2018
International Application No. PCT/KR2016/012763
International Filing Date 08.11.2016
IPC
H03F 3/45 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
3Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
45Differential amplifiers
H03F 1/22 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
1Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
08Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
22by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
H03F 1/30 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
1Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
30Modifications of amplifiers to reduce influence of variations of temperature or supply voltage
G05F 3/26 2006.01
GPHYSICS
05CONTROLLING; REGULATING
FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
3Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
02Regulating voltage or current
08wherein the variable is dc
10using uncontrolled devices with non-linear characteristics
16being semiconductor devices
20using diode-transistor combinations
26Current mirrors
CPC
G05F 3/26
GPHYSICS
05CONTROLLING; REGULATING
FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
3Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
02Regulating voltage or current
08wherein the variable is dc
10using uncontrolled devices with non-linear characteristics
16being semiconductor devices
20using diode- transistor combinations
26Current mirrors
H03F 1/22
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
1Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
08Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
22by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
H03F 1/30
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
1Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
30Modifications of amplifiers to reduce influence of variations of temperature or supply voltage ; or other physical parameters
H03F 3/45
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
3Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
45Differential amplifiers
Applicants
  • 이화여자대학교 산학협력단 EWHA UNIVERSITY-INDUSTRY COLLABORATION FOUNDATION [KR]/[KR]
Inventors
  • 박성민 PARK, Sung Min
  • 박민선 PARK, Min Seon
Agents
  • 남정길 NAM, Jung Kil
Priority Data
10-2016-008018727.06.2016KR
10-2016-009951204.08.2016KR
Publication Language Korean (KO)
Filing Language Korean (KO)
Designated States
Title
(EN) CONSTANT TRANSCONDUCTANCE CURRENT SOURCE AND OPERATIONAL AMPLIFIER USING SAME
(FR) SOURCE DE COURANT À TRANSCONDUCTANCE CONSTANTE ET AMPLIFICATEUR FONCTIONNEL UTILISANT LADITE SOURCE DE COURANT
(KO) 콘스탄트 트랜스 컨덕턴스 전류 소스 및 이를 이용한 연산 증폭기
Abstract
(EN)
A constant transconductance current source according to the present embodiment comprises: a modified cascode circuit of a first-conductive MOS transistor; and a current mirror circuit of a second-conductive MOS transistor, connected to the modified cascode circuit, wherein, in the modified cascode circuit, first and second transistors having connected gate electrodes and third and fourth transistors having connected gate electrodes are cascode-connected, the gate electrodes of the first and second transistors are connected to a drain electrode of the fourth transistor, and a bias voltage is provided to the gate electrodes of the third and fourth transistors.
(FR)
Selon la présente invention, une source de courant à transconductance constante comprend : un circuit cascode modifié d'un transistor MOS de première conductivité ; et un circuit miroir de courant d'un transistor MOS de seconde conductivité, connecté au circuit cascode modifié. Dans le circuit cascode modifié, des premier et deuxième transistors pourvus d'électrodes de grille connectées et des troisième et quatrième transistors pourvus d'électrodes de grille connectées sont connectés en cascade. Les électrodes de grille des premier et deuxième transistors sont connectées à une électrode de drain du quatrième transistor. Une tension de polarisation est appliquée aux électrodes de grille des troisième et quatrième transistors.
(KO)
본 실시예에 의한 콘스탄트 트랜스 컨덕턴스 전류 소스는 제1 도전형 MOS 트랜지스터의 모디파이드 캐스코드(modified cascode) 회로 및 모디파이드 캐스코드 회로와 연결된 제2 도전형 MOS 트랜지스터의 전류 미러 회로를 포함하며, 모디파이드 캐스코드 회로는, 게이트(gate) 전극이 서로 연결된 제1 트랜지스터 및 제2 트랜지스터와, 게이트(gate) 전극이 서로 연결된 제3 트랜지스터 및 제4 트랜지스터가 캐스코드(cascode)로 연결되고, 제1 트랜지스터 및 제2 트랜지스터의 게이트 전극이 제4 트랜지스터의 드레인 전극에 연결되며, 제3 트랜지스터 및 제4 트랜지스터의 게이트 전극에는 바이어스 전압이 제공된다.
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