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1. (WO2018004032) LASER WAFER PROCESSING METHOD
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2018/004032 International Application No.: PCT/KR2016/006996
Publication Date: 04.01.2018 International Filing Date: 30.06.2016
IPC:
H01L 21/268 (2006.01) ,H01L 21/68 (2006.01) ,H01L 21/67 (2006.01) ,H01L 21/02 (2006.01) ,H01L 21/66 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26
Bombardment with wave or particle radiation
263
with high-energy radiation
268
using electromagnetic radiation, e.g. laser radiation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
68
for positioning, orientation or alignment
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
66
Testing or measuring during manufacture or treatment
Applicants:
주식회사 코윈디에스티 COWINDST CO., LTD. [KR/KR]; 경기도 안양시 동안구 동편로 77 77, Dongpyeon-ro, Dongan-gu Anyang-si Gyeonggi-do 13930, KR
Inventors:
김선주 KIM, Seon Joo; KR
박훈 PARK, Hoon; KR
김현태 KIM, Hyun Tae; KR
박재웅 PARK, Jae Woong; KR
홍순영 HONG, Soon Young; KR
Agent:
김인한 KIM, In Han; KR
Priority Data:
10-2016-008171029.06.2016KR
Title (EN) LASER WAFER PROCESSING METHOD
(FR) PROCÉDÉ DE TRAITEMENT DE TRANCHE LASER
(KO) 레이저 웨이퍼 가공방법
Abstract:
(EN) The present invention relates to a laser wafer processing method which is capable of processing a wafer by a simple method without damage to the wafer. More specifically, the present invention relates to a laser processing method for a rectangular wafer arranged at a position different from a laser processing reference coordinate, comprising the steps of: acquiring the position information of the rectangular wafer; modifying the laser processing coordinate on the basis of the acquired position image; and processing the wafer with a laser irradiation apparatus in accordance with the modified processing coordinate.
(FR) La présente invention concerne un procédé de traitement de tranche laser qui est capable de traiter une tranche par un procédé simple sans endommager la tranche. Plus spécifiquement, la présente invention concerne un procédé de traitement au laser pour une tranche rectangulaire disposée à une position différente d'une coordonnée de référence de traitement au laser, comprenant les étapes consistant à: l'acquisition des informations de position de la tranche rectangulaire; la modification de la coordonnée de traitement laser sur la base de l'image de position acquise; et le traitement de la tranche avec un appareil d'irradiation laser conformément à la coordonnée de traitement modifiée.
(KO) 본 발명은 웨이퍼의 손상없이 간단한 방법으로 가공할 수 있는 레이저 웨이퍼 가공방법에 대한 것으로, 레이저 가공 기준 좌표와 다른 위치로 배치된 사각형의 웨이퍼의 레이저 가공방법에 있어서, 사각형의 웨이퍼의 위치정보를 획득하는 단계; 상기 획득된 위치영상을 바탕으로 레이저 가공 좌표를 수정하는 단계; 및 상기 수정된 가공좌표에 의해, 레이저 조사장치로 웨이퍼를 가공하는 단계;를 포함하는 것을 특징으로 하는 레이저 웨이퍼 가공방법
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)