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1. (WO2018003657) ELASTIC WAVE DEVICE
Latest bibliographic data on file with the International BureauSubmit observation

Pub. No.: WO/2018/003657 International Application No.: PCT/JP2017/023045
Publication Date: 04.01.2018 International Filing Date: 22.06.2017
IPC:
H03H 9/145 (2006.01) ,H03H 9/25 (2006.01)
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
H
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9
Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
02
Details
125
Driving means, e.g. electrodes, coils
145
for networks using surface acoustic waves
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
H
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9
Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
25
Constructional features of resonators using surface acoustic waves
Applicants:
株式会社村田製作所 MURATA MANUFACTURING CO., LTD. [JP/JP]; 京都府長岡京市東神足1丁目10番1号 10-1, Higashikotari 1-chome, Nagaokakyo-shi, Kyoto 6178555, JP
Inventors:
紺野 彰 KONNO, Akira; JP
Agent:
特許業務法人 宮▲崎▼・目次特許事務所 MIYAZAKI & METSUGI; 大阪府大阪市中央区常盤町1丁目3番8号 中央大通FNビル Chuo Odori FN Bldg., 3-8, Tokiwamachi 1-chome, Chuo-ku, Osaka-shi, Osaka 5400028, JP
Priority Data:
2016-12791128.06.2016JP
Title (EN) ELASTIC WAVE DEVICE
(FR) DISPOSITIF À ONDE ÉLASTIQUE
(JA) 弾性波装置
Abstract:
(EN) Provided is an elastic wave device capable of reducing a spurious component caused by a high-order mode of an elastic wave such as a Rayleigh wave. The elastic wave device 1 is provided with an IDT electrode 3 and an insulating film 6 disposed on a piezoelectric substrate 2 serving as a device substrate. When one end of an intersection region of the IDT electrode 3 in an elastic wave propagation direction is defined as a first end 3a, and the other end as a second end 3b, the thickness of the insulating film 6 decreases or increases toward the center in the elastic wave propagation direction from the first end 3a and the second end 3b.
(FR) L'invention concerne un dispositif à onde élastique capable de réduire une composante parasite provoquée par un mode d'ordre élevé d'une onde élastique telle qu'une onde de Rayleigh. Le dispositif à onde élastique (1) est pourvu d'une électrode IDT (3) et d'un film isolant (6) disposé sur un substrat piézoélectrique (2) faisant office de substrat de dispositif. Lorsqu'une extrémité d'une région d'intersection de l'électrode IDT (3) dans une direction de propagation d'onde élastique est définie en tant que première extrémité (3a) et l'autre extrémité en tant que deuxième extrémité (3b), l'épaisseur du film isolant (6) diminue ou augmente vers le centre dans la direction de propagation de l'onde élastique à partir de la première extrémité (3a) et de la deuxième extrémité (3b).
(JA) レイリー波などの弾性波の高次モードによるスプリアスを小さくし得る弾性波装置を提供する。 素子基板としての圧電基板2上にIDT電極3及び絶縁膜6が設けられている弾性波装置1。IDT電極3の交差領域上において、弾性波伝搬方向一端を第1の端部3a、他端を第2の端部3bとした場合に、第1の端部3a及び第2の端部3bから、弾性波伝搬方向中央に向かうにつれて、絶縁膜6の厚みが薄くまたは厚くなっている。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
KR1020180122007CN109417371