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1. (WO2018003633) ACTIVE MATRIX SUBSTRATE, OPTICAL SHUTTER SUBSTRATE, DISPLAY DEVICE, AND METHOD FOR MANUFACTURING ACTIVE MATRIX SUBSTRATE
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Pub. No.: WO/2018/003633 International Application No.: PCT/JP2017/022877
Publication Date: 04.01.2018 International Filing Date: 21.06.2017
IPC:
G09F 9/30 (2006.01) ,G02B 26/02 (2006.01) ,G09F 9/37 (2006.01) ,H01L 27/32 (2006.01) ,H01L 51/50 (2006.01) ,H05B 33/22 (2006.01)
G PHYSICS
09
EDUCATING; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
F
DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
9
Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
30
in which the desired character or characters are formed by combining individual elements
G PHYSICS
02
OPTICS
B
OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
26
Optical devices or arrangements using movable or deformable optical elements for controlling the intensity, colour, phase, polarisation or direction of light, e.g. switching, gating, modulating
02
for controlling the intensity of light
G PHYSICS
09
EDUCATING; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
F
DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
9
Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
30
in which the desired character or characters are formed by combining individual elements
37
being movable elements
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28
including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
32
with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50
specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
B
ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
33
Electroluminescent light sources
12
Light sources with substantially two-dimensional radiating surfaces
22
characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
Applicants:
シャープ株式会社 SHARP KABUSHIKI KAISHA [JP/JP]; 大阪府堺市堺区匠町1番地 1, Takumi-cho, Sakai-ku, Sakai City, Osaka 5908522, JP
Inventors:
岡部 達 OKABE, Tohru; --
錦 博彦 NISHIKI, Hirohiko; --
家根田 剛士 YANEDA, Takeshi; --
Agent:
特許業務法人HARAKENZO WORLD PATENT & TRADEMARK HARAKENZO WORLD PATENT & TRADEMARK; 大阪府大阪市北区天神橋2丁目北2番6号 大和南森町ビル Daiwa Minamimorimachi Building, 2-6, Tenjinbashi 2-chome Kita, Kita-ku, Osaka-shi, Osaka 5300041, JP
Priority Data:
2016-12810928.06.2016JP
Title (EN) ACTIVE MATRIX SUBSTRATE, OPTICAL SHUTTER SUBSTRATE, DISPLAY DEVICE, AND METHOD FOR MANUFACTURING ACTIVE MATRIX SUBSTRATE
(FR) SUBSTRAT DE MATRICE ACTIVE, SUBSTRAT D'OBTURATEUR OPTIQUE, DISPOSITIF D'AFFICHAGE ET PROCÉDÉ DE FABRICATION D'UN SUBSTRAT DE MATRICE ACTIVE
(JA) アクティブマトリクス基板、光シャッタ基板、表示装置、アクティブマトリクス基板の製造方法
Abstract:
(EN) Provided is an active matrix substrate in which the disconnection of metal films in a contact hole is less likely to occur. The active matrix substrate includes, on a glass substrate (1), first to third insulating films (4, 6, 11), first to third metal films (5, 9, 12), and a contact hole (CH) for electrically connecting the first and second metal films (5, 9). The contact hole (CH) includes first to third holes (H1, H2, H3) formed in the first to third insulating films (4, 6, 11), respectively. The first and third metal films (5, 12) are brought into contact with each other inside the first hole (H1), an oxide semiconductor film (7) overlaps the second insulating film (6) in the lower region of the third hole (H3), and the second and third metal films (9, 12) are brought into contact with each other inside or in the lower region of the third hole (H3) above the first insulating film (4).
(FR) L'invention concerne un substrat de matrice active dans lequel la déconnexion des films métalliques est moins susceptible de se produire dans un trou de contact. Le substrat de matrice active comprend, sur un substrat en verre (1), des premier à troisième films isolants (4, 6, 11), des premier à troisième films métalliques (5, 9, 12) ainsi qu'un trou de contact (CH) permettant de relier électriquement les premier et second films métalliques (5, 9). Le trou de contact (CH) comprend des premier à troisième trous (H1, H2, H3) formés respectivement dans les premier et troisième films isolants (4 6, 11). Les premier et troisième films métalliques (5, 12) sont mis en contact l'un avec l'autre dans le premier trou (H1), un film semi-conducteur d'oxyde (7) chevauche le second film isolant (6) dans la zone inférieure du troisième trou (H3), et les deuxième et troisième films métalliques (9, 12) sont mis en contact l'un avec l'autre dans la zone inférieure du troisième trou (H3) au-dessus du premier film isolant (4).
(JA) コンタクトホール内での金属膜の段切れが生じにくいアクティブマトリクス基板を実現する。ガラス基板(1)上に、第1~第3絶縁膜(4,6,11)および第1~第3金属膜(5,9,12)と、第1および第2金属膜(5,9)を電気的に接続するコンタクトホール(CH)とを備え、前記コンタクトホール(CH)は、第1~第3絶縁膜(4,6,11)それぞれに形成された第1~第3ホール(H1,H2,H3)を有し、第1ホール(H1)の内側において第1および第3金属膜(5,12)が接触し、前記第3ホール(H3)の下方となる領域において第2絶縁膜(6)および酸化物半導体膜(7)が重畳し、前記第1絶縁膜(4)の上方で第3ホール(H3)の内側または下方となる領域において第2および第3金属膜(9,12)が接触している。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)