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1. (WO2018003259) LIGHT-EMITTING COMPONENT, PRINT HEAD, IMAGE FORMING DEVICE, AND SEMICONDUCTOR LAYER LAMINATED SUBSTRATE
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Pub. No.: WO/2018/003259 International Application No.: PCT/JP2017/016234
Publication Date: 04.01.2018 International Filing Date: 24.04.2017
IPC:
H01L 33/08 (2010.01) ,B41J 2/447 (2006.01) ,H01L 33/04 (2010.01) ,H01L 33/14 (2010.01) ,H01S 5/026 (2006.01) ,H01S 5/42 (2006.01) ,B41J 2/455 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
08
with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
B PERFORMING OPERATIONS; TRANSPORTING
41
PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
J
TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
2
Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
435
characterised by selective application of radiation to a printing material or impression-transfer material
447
using arrays of radiation sources
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
04
with a quantum effect structure or superlattice, e.g. tunnel junction
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
14
with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
02
Structural details or components not essential to laser action
026
Monolithically integrated components, e.g. waveguides, monitoring photo-detectors or drivers
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
40
Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02-H01S5/30128
42
Arrays of surface emitting lasers
B PERFORMING OPERATIONS; TRANSPORTING
41
PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
J
TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
2
Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
435
characterised by selective application of radiation to a printing material or impression-transfer material
447
using arrays of radiation sources
455
using laser arrays
Applicants: FUJI XEROX CO., LTD.[JP/JP]; 7-3, Akasaka 9-chome, Minato-ku, Tokyo 1070052, JP
Inventors: KONDO Takashi; JP
Agent: KOH-EI PATENT FIRM, P.C.; Toranomon East Bldg. 9F, 7-13, Nishi-Shimbashi 1-chome, Minato-ku, Tokyo 1050003, JP
Priority Data:
2016-12975730.06.2016JP
Title (EN) LIGHT-EMITTING COMPONENT, PRINT HEAD, IMAGE FORMING DEVICE, AND SEMICONDUCTOR LAYER LAMINATED SUBSTRATE
(FR) COMPOSANT ÉMETTEUR DE LUMIÈRE, TÊTE D'IMPRESSION, DISPOSITIF DE FORMATION D'IMAGE ET SUBSTRAT STRATIFIÉ DE COUCHE SEMI-CONDUCTRICE
(JA) 発光部品、プリントヘッド、画像形成装置及び半導体層積層基板
Abstract:
(EN) A light-emitting chip C is provided with a substrate 80 comprising: a first semiconductor laminated body comprising a plurality of light-emitting elements LD; a tunneling junction layer 84 or a III-V group compound layer having metallic electrical conductivity which is disposed on the first semiconductor laminated body; and a second semiconductor layer which is disposed on the tunneling junction layer 84 or the III-V group compound layer, and which includes a setting thyristor S and a drive portion for driving the plurality of light-emitting elements sequentially to a state in which the light-emitting elements can transition to an ON state.
(FR) La présente invention concerne une puce électroluminescente pourvue d'un substrat (80) comprenant : un premier corps stratifié semi-conducteur comprenant une pluralité d'éléments électroluminescents LD ; une couche de jonction à effet tunnel (84) ou une couche de composé de groupe III-V ayant une conductivité électrique métallique qui est disposée sur le premier corps stratifié à semi-conducteurs ; et une seconde couche semi-conductrice qui est disposée sur la couche de jonction tunnel (84) ou la couche de composé de groupe III-V, et qui comprend un thyristor de réglage (S) et une partie de commande pour commander séquentiellement la pluralité d'éléments électroluminescents à un état dans lequel les éléments électroluminescents peuvent passer à un état de marche.
(JA) 発光チップCは、複数の発光素子LDを含む第1の半導体積層体と、前記第1の半導体積層体の上に設けられた、トンネル接合層84又は金属的な導電性を有するIII-V族化合物層と、前記トンネル接合層84又は前記III-V族化合物層の上に設けられ、設定サイリスタSを含むとともに複数の前記発光素子を順にオン状態への移行が可能な状態に駆動する駆動部を含む第2の半導体層とを備える基板80を備える。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)