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1. (WO2018003142) COMPOSITION FOR PASSIVATION LAYER FORMATION, SEMICONDUCTOR SUBSTRATE WITH PASSIVATION LAYER, METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE WITH PASSIVATION LAYER, SOLAR CELL ELEMENT, METHOD FOR MANUFACTURING SOLAR CELL ELEMENT, AND SOLAR CELL
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Pub. No.:    WO/2018/003142    International Application No.:    PCT/JP2016/086388
Publication Date: 04.01.2018 International Filing Date: 07.12.2016
IPC:
H01L 21/316 (2006.01), H01L 31/0216 (2014.01)
Applicants: HITACHI CHEMICAL COMPANY, LTD. [JP/JP]; 9-2, Marunouchi 1-chome, Chiyoda-ku, Tokyo 1006606 (JP)
Inventors: HAYASAKA, Tsuyoshi; (JP).
NOJIRI, Takeshi; (JP).
TANAKA, Naotaka; (JP).
HAMADA, Mitsuyoshi; (JP).
SHIMIZU, Mari; (JP).
KODAMA, Shunsuke; (JP)
Agent: TAIYO, NAKAJIMA & KATO; 3-17, Shinjuku 4-chome, Shinjuku-ku, Tokyo 1600022 (JP)
Priority Data:
2016-128085 28.06.2016 JP
Title (EN) COMPOSITION FOR PASSIVATION LAYER FORMATION, SEMICONDUCTOR SUBSTRATE WITH PASSIVATION LAYER, METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE WITH PASSIVATION LAYER, SOLAR CELL ELEMENT, METHOD FOR MANUFACTURING SOLAR CELL ELEMENT, AND SOLAR CELL
(FR) COMPOSITION POUR FORMATION DE COUCHE DE PASSIVATION, SUBSTRAT SEMI-CONDUCTEUR À COUCHE DE PASSIVATION, PROCÉDÉ DE FABRICATION DE SUBSTRAT SEMI-CONDUCTEUR À COUCHE DE PASSIVATION, ÉLÉMENT DE CELLULE SOLAIRE, PROCÉDÉ DE FABRICATION D'ÉLÉMENT DE CELLULE SOLAIRE, ET CELLULE SOLAIRE
(JA) パッシベーション層形成用組成物、パッシベーション層付半導体基板、パッシベーション層付半導体基板の製造方法、太陽電池素子、太陽電池素子の製造方法、及び太陽電池
Abstract: front page image
(EN)A composition for passivation layer formation that includes the compound expressed in general formula (I). Bi (OR1) m (I) [where R1 represents an independent alkyl group, aryl group, or acyl group, and m represents 3 or 5.]
(FR)L'invention porte sur une composition pour la formation d'une couche de passivation qui comprend le composé exprimé dans la formule générale (I). Bi (OR 1) m (I) [où R 1 représente un groupe alkyle indépendant, un groupe aryle ou un groupe acyle, et m représente 3 ou 5]
(JA)下記一般式(I)で表される化合物を含むパッシベーション層形成用組成物。 Bi(OR (I) [Rはそれぞれ独立してアルキル基、アリール基又はアシル基を表す。mは3又は5を表す。]
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)