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1. (WO2018002498) OPTOELECTRONIC DEVICE COMPRISING THREE-DIMENSIONAL DIODES
Latest bibliographic data on file with the International BureauSubmit observation

Pub. No.: WO/2018/002498 International Application No.: PCT/FR2017/051693
Publication Date: 04.01.2018 International Filing Date: 26.06.2017
IPC:
H01L 27/15 (2006.01) ,H01L 33/18 (2010.01) ,H01L 33/24 (2010.01) ,H01L 33/38 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
15
including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
16
with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
18
within the light emitting region
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
20
with a particular shape, e.g. curved or truncated substrate
24
of the light emitting region, e.g. non-planar junction
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36
characterised by the electrodes
38
with a particular shape
Applicants:
ALEDIA [FR/FR]; CHEZ MINATEC BÂTIMENT HAUTE TECHNOLOGIE N°52 7 PARVIS LOUIS NÉEL BP 50 38040 GRENOBLE, FR
COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES [FR/FR]; Bâtiment le Ponant D 25 rue Leblanc 75015 PARIS, FR
Inventors:
DUPONT, Florian; FR
AMSTATT, Benoit; FR
BEIX, Vincent; FR
LACAVE, Thomas; FR
GILET, Philippe; FR
HENAFF, Ewen; FR
HYOT, Bérangère; FR
BONO, Hubert; FR
Agent:
DUPONT, Jean-Baptiste; FR
LE GOALLER, Christophe; FR
GUERIN, Jean-Philippe; FR
Priority Data:
165621830.06.2016FR
Title (EN) OPTOELECTRONIC DEVICE COMPRISING THREE-DIMENSIONAL DIODES
(FR) DISPOSITIF OPTOELECTRONIQUE A DIODES TRIDIMENSIONNELLES
Abstract:
(EN) The invention relates to an optoelectronic device (1) comprising: - a support that has a rear surface (3a) and a front surface (3b) opposite each other; - a plurality of nucleating conductor strips (6i) that form first polarizing electrodes; - an intermediate insulating layer (7) that covers the nucleating conductor strips (6i); - a plurality of diodes (2), each of which has a first, three-dimensional doped region (9) and a second doped region (11); - a plurality of top conductor strips (14j) that form second polarizing electrodes and rest on the intermediate insulating layer (7), each top conductor strip (14j) being disposed in such a way as to be in contact with the second doped regions (11) of a set of diodes (2) of which the first doped regions (9) are in contact with different nucleating conductor strips (6i).
(FR) L'invention porte sur un dispositif optoélectronique (1), comportant : ‐ un support, comportant des faces opposées dites arrière (3a) et avant (3b); ‐ une pluralité de bandes conductrices de nucléation (6i) formant des premières électrodes de polarisation; ‐ une couche isolante intermédiaire (7) recouvrant les bandes conductrices de nucléation (6i); ‐ une pluralité de diodes (2), chacune comportant une première portion dopée (9) tridimensionnelle et une seconde portion dopée (11); ‐ une pluralité de bandes conductrices supérieures (14j) formant des secondes électrodes de polarisation, reposant sur la couche isolante intermédiaire (7), chaque bande conductrice supérieure (14j) étant agencée de manière à être au c o n t a c t d e s e c o n d e s portions dopées (11) d'un ensemble de diodes (2) dont les premières portions dopées (9) sont au contact de différentes bandes conductrices de nucléation (6i).
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: French (FR)
Filing Language: French (FR)
Also published as:
CN109417084EP3479409US20190172970