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1. (WO2018000810) THIN-FILM TRANSISTOR AND DISPLAY DEVICE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2018/000810 International Application No.: PCT/CN2017/071598
Publication Date: 04.01.2018 International Filing Date: 18.01.2017
IPC:
H01L 29/786 (2006.01) ,H01L 29/08 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
786
Thin-film transistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02
Semiconductor bodies
06
characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
08
with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
Applicants:
深圳市华星光电技术有限公司 SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD. [CN/CN]; 中国广东省深圳市 光明新区塘明大道9-2号 No.9-2, Tangming Road, Guangming New District Shenzhen, Guangdong 518132, CN
Inventors:
雍玮娜 YONG, Weina; CN
Agent:
北京聿宏知识产权代理有限公司 YUHONG INTELLECTUAL PROPERTY LAW FIRM; 中国北京市 西城区宣武门外大街6号庄胜广场第一座西翼713室吴大建/王浩 WU Dajian/WANG Hao West Wing, Suite 713, One Junefield Plaza 6 Xuanwumenwai Street, Xicheng District Beijing 100052, CN
Priority Data:
201610510471.601.07.2016CN
Title (EN) THIN-FILM TRANSISTOR AND DISPLAY DEVICE
(FR) TRANSISTOR Á COUCHE MINCE ET DISPOSITIF D'AFFICHAGE
(ZH) 薄膜晶体管及显示装置
Abstract:
(EN) A thin-film transistor and display device are provided to reduce parasitic capacitance between a first metal layer and a second metal layer, and enhance display quality of a liquid crystal display. The thin film transistor comprises a gate (21); a gate insulation layer (22) covering the gate; a semiconductor layer (23) formed above the gate insulation layer; and a source (24) and a drain (25) formed above the semiconductor layer. The semiconductor layer comprises an extending portion (231) having a planar projection exceeding an edge of the gate. The drain covers the extending portion.
(FR) Un transistor à couche mince et un dispositif d'affichage sont prévus pour réduire la capacité parasite entre une première couche métallique et une seconde couche métallique, et améliorer la qualité d'affichage d'un affichage à cristaux liquides. Le transistor en couches minces comprend une grille (21); une couche de grille d'isolation (22) recouvrant la grille; une couche semi-conductrice (23) formée sur la couche de grille d'isolation; et une source (24) et un drain (25) formés sur la couche semi-conductrice. La couche semi-conductrice comprend une portion d'extension (231) ayant une projection plane dépassant un bord de la grille. Le drain recouvre la portion d'extension.
(ZH) 一种薄膜晶体管及显示装置,能够降低第一金属层与第二金属层之间的寄生电容,提高液晶显示器的显示品质。薄膜晶体管包括栅极(21);覆盖在栅极上的栅极绝缘层(22);形成于栅极绝缘层上的半导体层(23);形成于半导体层上的源极(24)和漏极(25);半导体层具有一延伸部分(231),延伸部分的平面投影超出栅极的边缘,且漏极覆盖延伸部分。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)
Also published as:
US20190189759