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1. (WO2018000551) SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR COMPONENT AND POWER SEMICONDUCTOR DEVICE

Pub. No.:    WO/2018/000551    International Application No.:    PCT/CN2016/095675
Publication Date: Fri Jan 05 00:59:59 CET 2018 International Filing Date: Thu Aug 18 01:59:59 CEST 2016
IPC: H01L 29/06
H01L 29/861
Applicants: CHONGQING PINGWEI ENTERPRISE CO., LTD
重庆平伟实业股份有限公司
UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA
电子科技大学
Inventors: DU, Jiangfeng
杜江锋
LI, Zhenchao
李振超
LIU, Dong
刘东
BAI, Zhiyuan
白智元
YU, Qi
于奇
LI, Shuzhou
李述洲
Title: SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR COMPONENT AND POWER SEMICONDUCTOR DEVICE
Abstract:
Provided in the present invention are a semiconductor structure, a semiconductor component and a power semiconductor device, the semiconductor structure comprising: a P-type semiconductor material layer; an N-type semiconductor material layer, which is adjacently joined to the P-type semiconductor material layer and forms a PN junction together with the P-type semiconductor material layer; a multilayer insulating material layer, which is located outside the PN junction and distributed along a stacking direction of the P-type semiconductor material layer and the N-type semiconductor material layer, wherein relative dielectric constants of adjacent insulating material layers are different. The semiconductor structure of the present invention significantly optimizes electric field distribution at the time of voltage withstanding of a device, greatly improving breakdown voltage of the device, and avoiding a drop in withstand voltage of the device caused by a concentrated effect of an electric field at the edge of the junction, thus preventing the device from being broken down too early; the present invention avoids the use of a field ring and a metal field board structure, thus reducing a chip area, reducing the cost of the device and improving the reliability of the device.