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|1. (WO2018000551) SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR COMPONENT AND POWER SEMICONDUCTOR DEVICE|
|Applicants:||CHONGQING PINGWEI ENTERPRISE CO., LTD
UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA
|Title:||SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR COMPONENT AND POWER SEMICONDUCTOR DEVICE|
Provided in the present invention are a semiconductor structure, a semiconductor component and a power semiconductor device, the semiconductor structure comprising: a P-type semiconductor material layer; an N-type semiconductor material layer, which is adjacently joined to the P-type semiconductor material layer and forms a PN junction together with the P-type semiconductor material layer; a multilayer insulating material layer, which is located outside the PN junction and distributed along a stacking direction of the P-type semiconductor material layer and the N-type semiconductor material layer, wherein relative dielectric constants of adjacent insulating material layers are different. The semiconductor structure of the present invention significantly optimizes electric field distribution at the time of voltage withstanding of a device, greatly improving breakdown voltage of the device, and avoiding a drop in withstand voltage of the device caused by a concentrated effect of an electric field at the edge of the junction, thus preventing the device from being broken down too early; the present invention avoids the use of a field ring and a metal field board structure, thus reducing a chip area, reducing the cost of the device and improving the reliability of the device.