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1. (WO2018000346) CONTACT ARRAY OPTIMIZATION FOR ESD DEVICES
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2018/000346 International Application No.: PCT/CN2016/087951
Publication Date: 04.01.2018 International Filing Date: 30.06.2016
IPC:
H01L 29/06 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02
Semiconductor bodies
06
characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
Applicants:
TEXAS INSTRUMENTS INCORPORATED [US/US]; P.O. Box 655474 Mail Station 3999 Dallas, TX 75265-5474, US
TEXAS INSTRUMENTS JAPAN LIMITED [JP/JP]; 24-1 Nishi-Shinjuku 6-chome Shinjuku-ku, Tokyo 160-8366, JP (JP)
Inventors:
LIN, He; CN
CHEN, Kun; CN
WU, Chao; CN
WANG, Dening; US
SPRINGER, Lily; US
STRACHAN, Andy; US
XUE, Gang; US
Agent:
JEEKAI & PARTNERS; Floor 15A, Building No. 5, GTFC Plaza 9 Guang'an Road, Fengtai District Beijing 100055, CN
Priority Data:
Title (EN) CONTACT ARRAY OPTIMIZATION FOR ESD DEVICES
(FR) OPTIMISATION DE RÉSEAU DE CONTACTS POUR DISPOSITIFS ESD
Abstract:
(EN) A contact array optimization scheme (200) for ESD devices (100). Contact apertures (191A/191B) patterned through a pre-metal dielectric layer (195) over active areas (126/128, 134) may be selectively modified in size, shape, placement and the like, to increase ESD protection performance, e.g., such as maximizing the transient current density, etc., in a standard ESD rating test.
(FR) L'invention concerne un schéma d'optimisation de réseau de contacts (200) appliqué à des dispositifs ESD (100). Des ouvertures de contact (191A/191B) formées à travers une couche diélectrique pré-métallique (195) disposée sur des zones actives (126/128 134) peuvent être modifiées sélectivement en taille, en forme, en position et autres, afin d'augmenter l'efficacité de protection ESD, par exemple de façon à rendre maximale la densité des courants transitoires, etc., dans un test d'évaluation ESD normalisé.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
CN109196648