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1. (WO2017210534) HETERO-STRUCTURE-BASED INTEGRATED PHOTONIC DEVICES, METHODS AND APPLICATIONS
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CLAIMS

What is claimed is:

1. An integrated photonics structure, comprising:

a substrate having at least one opening disposed therein;

a semiconductor stack disposed above the substrate, the semiconductor stack being, at least in part, isolated from the substrate by the at least one opening to define a suspended semiconductor membrane; and

a first doped region and a second doped region located within the suspended semiconductor membrane, wherein the first doped region is laterally separated from the second doped region by an optically active layer disposed therein that defines a waveguiding region of the integrated photonic structure.

2. The integrated photonics structure of claim 1, wherein the waveguiding region is laterally confined equidistant from each of the first and the second doped regions within the suspended semiconductor membrane.

3. The integrated photonic structure of claim 1, wherein the first doped region comprises a first dopant material, and the second doped region comprises a second, different dopant material, wherein each of the first doped region and the second doped region define the waveguiding region to be a multiple quantum well.

4. The integrated photonic structure of claim 1, wherein each of the first and the second doped regions comprise same dopant material, and a gate structure disposed over the semiconductor stack, wherein each of the first doped region and the second doped region define the waveguiding region to be a two-dimensional electron gas channel.

5. The integrated photonic structure of claim 1, further comprising an inverted T-shaped optical waveguide comprising a first portion that extends from a second portion, the second portion being a patterned semiconductor stack of the suspended semiconductor membrane, wherein the waveguiding region is horizontally confined at an intersection of the first portion and the second portion of the suspended semiconductor membrane.

6. The integrated photonic structure of claim 1, further comprising a T-shaped optical waveguide, the T-shaped optical waveguide comprising a first portion that extends into the substrate, and a second portion disposed over the first portion, wherein intensity of an electric field is maximum at an intersection of the first portion and the second portion of the suspended semiconductor membrane, and the first portion comprises the substrate post.

7. The integrated photonic structure of claim 6, wherein a width "W" of the first portion is substantially equal to a thickness "T" of the second portion.

8. The integrated photonic structure of claim 1, wherein the semiconductor stack of the suspended semiconductor membrane has a thickness between 0.2 μπι to 3 μπι.

9. The integrated photonic structure of claim 1, wherein the first doped region is laterally separated from the second doped region within the suspended semiconductor membrane by a distance of 1 μπι to 5 μπι.

10. A method for fabricating an integrated photonic structure, the method comprising:

providing a semiconductor stack disposed over a substrate, the semiconductor stack being, at least in part, isolated from the underlying substrate by at least one opening disposed therein to define a suspended semiconductor membrane; and

forming a first doped region and a second doped region within the suspended semiconductor membrane, wherein the first doped region is laterally separated from the second doped region by an optically active region disposed therein that defines a waveguide region of the integrated photonic structure.

11. The method of claim 10, wherein the waveguiding region is laterally confined equidistant from each of the first and the second doped regions within the suspended semiconductor membrane.

12. The method of claim 10, wherein the first doped region comprises a first dopant material, and the second doped region comprises a second, different dopant material, wherein each of the first doped region and the second doped region define the optically active region to be a multiple quantum well.

13. The method of claim 10, wherein each of the first and the second doped regions comprise same dopant material, and the method further comprises forming a gate structure disposed over the suspended semiconductor membrane, wherein each of the first doped region and the second doped region define the optically active region to be a two-dimensional electron gas channel.

14. The method of claim 10, further comprising patterning the suspended semiconductor membrane to define an inverted T-shaped optical waveguide, the inverted T-shaped optical waveguide comprising a first portion that extends from a second portion, wherein the waveguiding region is horizontally confined at an intersection of the first portion and the second portion of the suspended semiconductor membrane, and the second portion comprises a patterned semiconductor stack of the suspended semiconductor membrane.

15. The method of claim 10, further comprising patterning the substrate to form a substrate post that extends from the substrate, the substrate post separating each of the at least one opening, and supporting the suspended semiconductor membrane to define a T-shaped optical waveguide, wherein the T-shaped optical waveguide comprises a first portion that extends into the substrate, and a second portion disposed over the first portion, the first portion comprising the substrate stack.

16. The method of claim 15, wherein intensity of an electric field is maximum at an intersection of the first portion and the second portion of the suspended semiconductor membrane.

17. The method of claim 10, wherein the providing comprises patterning the substrate to form at least one opening disposed therein, prior to the providing of the semiconductor stack, and forming a seeded semiconductor layer over the substrate.

18. The method of claim 17, wherein the forming the seeded semiconductor layer comprises disposing a layer of the semiconductor material over the substrate, and thermally slicing the semiconductor material layer along an implanted region disposed therein, and planarizing the sliced semiconductor material layer to define the seeded semiconductor layer.

19. The method of claim 18, wherein the providing comprises epitaxially growing a semiconductor layer over the seeded semiconductor layer, and subsequently epitaxially growing at least one material layer over the semiconductor layer to define the semiconductor stack, the at least one material layer comprising the optically active material layer.

20. The method of claim 19, wherein the forming comprising implanting, at least in part, at least one dopant within the semiconductor stack to form each of the first and the second doped regions, the first doped region being laterally separated from the second doped region within the semiconductor stack by a distance of about 1 μπι to about 5 μπι.