Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2017210534) HETERO-STRUCTURE-BASED INTEGRATED PHOTONIC DEVICES, METHODS AND APPLICATIONS
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2017/210534 International Application No.: PCT/US2017/035646
Publication Date: 07.12.2017 International Filing Date: 02.06.2017
IPC:
H01S 5/02 (2006.01) ,H01S 5/22 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
02
Structural details or components not essential to laser action
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
20
Structure or shape of the semiconductor body to guide the optical wave
22
having a ridge or a stripe structure
Applicants:
UNIVERSITY OF CENTRAL FLORIDA RESEARCH FOUNDATION, INC. [US/US]; 12201 Research Parkway, Suite 501 Orlando, FL 32826, US
Inventors:
FATHPOUR, Sasan; US
CHILES, Jeffrey; US
Agent:
NOTO, Joseph, M.; US
GREENER, William; US
NOCILLY, David, L.; US
MCGUIRE, George, R.; US
PRICE, Frederick, Jm; US
Priority Data:
62/345,39303.06.2016US
Title (EN) HETERO-STRUCTURE-BASED INTEGRATED PHOTONIC DEVICES, METHODS AND APPLICATIONS
(FR) DISPOSITIFS PHOTONIQUES INTÉGRÉS BASÉS SUR UNE HÉTÉROSTRUCTURE, PROCÉDÉS ET APPLICATIONS
Abstract:
(EN) An integrated photonic structure and a method of fabrication are provided which includes: a substrate having at least one opening disposed therein; a semiconductor stack disposed above the substrate, the semiconductor stack being, at least in part, isolated from the underlying substrate by the at least one opening to define a suspended semiconductor membrane; and a first doped region and a second doped region located within the suspended semiconductor membrane, wherein the first doped region is laterally separated from the second doped region by an optically active region disposed therein that defines a waveguiding region of the integrated photonic structure.
(FR) L'invention concerne une structure photonique intégrée et un procédé de fabrication comprenant : un substrat présentant au moins une ouverture ménagée en son sein ; un empilement de semi-conducteurs ménagé au-dessus du substrat, l'empilement de semi-conducteurs étant, au moins en partie, isolé du substrat sous-jacent par ladite ouverture de façon à délimiter une membrane semi-conductrice suspendue ; et des première et seconde régions dopées situées à l'intérieur de la membrane semi-conductrice suspendue, la première région dopée étant séparée latéralement de la seconde région dopée par une région optiquement active ménagée en son sein qui délimite une région de guide d'ondes de la structure photonique intégrée.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)