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1. (WO2017205658) ATOMIC LAYER ETCHING ON MICRODEVICES AND NANODEVICES
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.:    WO/2017/205658    International Application No.:    PCT/US2017/034532
Publication Date: 30.11.2017 International Filing Date: 25.05.2017
IPC:
C23C 16/56 (2006.01), B05D 7/24 (2006.01), C23C 16/01 (2006.01)
Applicants: THE REGENTS OF THE UNIVERSITY OF COLORADO, A BODY CORPORATE [US/US]; 1800 Grant Street 8th Floor Denver, Colorado 80203 (US).
DRS NETWORK & IMAGING SYSTEMS, LLC [US/US]; 13532 N. Central Expressway Dallas, Texas 75243 (US)
Inventors: GEORGE, Steven M.; (US).
BRIGHT, Victor M.; (US).
BROWN, Joseph J.; (US).
GERTSCH, Jonas; (US).
EIGENFELD, Nathan Thomas; (US).
SKIDMORE, George; (US)
Agent: SILVA, Domingos J.; (US).
CROTTY, Justin; (US).
DOYLE, Kathryn; (US).
LANDRY, Brian R.; (US).
MANAS, Michael G.; (US).
SIMPSON, Mark D.; (US)
Priority Data:
62/341,394 25.05.2016 US
Title (EN) ATOMIC LAYER ETCHING ON MICRODEVICES AND NANODEVICES
(FR) GRAVURE DE COUCHE ATOMIQUE SUR DES MICRODISPOSITIFS ET DES NANODISPOSITIFS
Abstract: front page image
(EN)The present invention relates to the unexpected discovery of novel methods of preparing nanodevices and/or microdevices with predetermined patterns. In one aspect, the methods of the invention allow for engineering structures and films with continuous thickness equal to or less than 50 nm.
(FR)La présente invention concerne la découverte inattendue de nouveaux procédés de préparation de nanodispositifs et/ou de microdispositifs ayant des motifs prédéfinis. Dans un aspect, les procédés de l'invention permettent d'obtenir des structures et des films d'ingénierie ayant une épaisseur continue égale ou inférieure à 50 nm.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)