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1. (WO2017205181) FOUNDRY-AGNOSTIC POST-PROCESSING METHOD FOR A WAFER
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2017/205181 International Application No.: PCT/US2017/033330
Publication Date: 30.11.2017 International Filing Date: 18.05.2017
IPC:
H01L 21/20 (2006.01) ,H01L 21/768 (2006.01) ,H01L 21/84 (2006.01) ,H01L 27/12 (2006.01)
Applicants: RAYTHEON COMPANY[US/US]; 870 Winter Street Waltham, Massachusetts 02451-1449, US
Inventors: TESHIBA, Mary A.; US
DRAB, John J.; US
Agent: LAWRENCE, M. Brad; US
Priority Data:
15/166,82127.05.2016US
Title (EN) FOUNDRY-AGNOSTIC POST-PROCESSING METHOD FOR A WAFER
(FR) PROCÉDÉ DE POST-TRAITEMENT AGNOSTIQUE DE FONDERIE POUR UNE TRANCHE
Abstract: front page image
(EN) A foundry-agnostic post-processing method for a wafer is provided. The wafer includes an active surface, a substrate and an intermediate layer interposed between the active surface and the substrate. The method includes removing the wafer from an output yield of a wafer processing foundry, thinning the substrate to the intermediate layer or within microns of the intermediate layer to expose a new surface and bonding the new surface to an alternate material substrate which provides for enhanced device performance as compared to the substrate.
(FR) La présente invention porte sur un procédé de post-traitement agnostique de fonderie pour une tranche. La tranche comprend une surface active, un substrat et une couche intermédiaire intercalée entre la surface active et le substrat. Le procédé consiste à retirer la tranche du rendement de sortie d'une fonderie de traitement de tranche, à amincir le substrat sur la couche intermédiaire ou à l'intérieur de microns de la couche intermédiaire afin d'exposer une nouvelle surface et à lier la nouvelle surface à un substrat de matériau alternatif, ce qui permet d'améliorer les performances du dispositif par rapport au substrat.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)