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1. (WO2017205088) ASYMMETRICAL SENSING AMPLIFIER AND RELATED METHOD FOR FLASH MEMORY DEVICES
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2017/205088 International Application No.: PCT/US2017/032575
Publication Date: 30.11.2017 International Filing Date: 14.05.2017
IPC:
G11C 7/08 (2006.01) ,G11C 8/12 (2006.01) ,G11C 11/34 (2006.01) ,G11C 11/56 (2006.01) ,G11C 16/04 (2006.01) ,G11C 16/08 (2006.01)
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
7
Arrangements for writing information into, or reading information out from, a digital store
06
Sense amplifiers; Associated circuits
08
Control thereof
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
8
Arrangements for selecting an address in a digital store
12
Group selection circuits, e.g. for memory block selection, chip selection, array selection
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
11
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
21
using electric elements
34
using semiconductor devices
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
11
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
56
using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
16
Erasable programmable read-only memories
02
electrically programmable
04
using variable threshold transistors, e.g. FAMOS
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
16
Erasable programmable read-only memories
02
electrically programmable
06
Auxiliary circuits, e.g. for writing into memory
08
Address circuits; Decoders; Word-line control circuits
Applicants: SILICON STORAGE TECHNOLOGY, INC.[US/US]; 450 Holger Way San Jose, CA 95134, US
Inventors: TRAN, Hieu Van; US
LY, Anh; US
VU, Thuan; US
Agent: YAMASHITA, Brent; US
Priority Data:
15/163,54824.05.2016US
Title (EN) ASYMMETRICAL SENSING AMPLIFIER AND RELATED METHOD FOR FLASH MEMORY DEVICES
(FR) AMPLIFICATEUR DE DÉTECTION ASYMÉTRIQUE ET PROCÉDÉ ASSOCIE POUR DISPOSITIFS DE MÉMOIRE FLASH
Abstract:
(EN) The present invention relates to an improved sensing amplifier and related method for use in read operations in flash memory devices. In one embodiment, the sensing amplifier includes a built-in voltage offset. In another embodiment, a voltage offset is induced in the sensing amplifier through the use of capacitors. In another embodiment, the sensing amplifier utilizes sloped timing for the reference signal to increase the margin by which a "0" or "1" are detected from the current drawn by the selected cell compared to the reference cell. In an another embodiment, a sensing amplifier is used without any voltage offset.
(FR) La présente invention concerne un amplificateur de détection amélioré et un procédé associé destinés à être utilisés dans des opérations de lecture dans des dispositifs de mémoire flash. Dans un mode de réalisation, l'amplificateur de détection comprend un décalage de tension intégré. Dans un autre mode de réalisation, un décalage de tension est induit dans l'amplificateur de détection par l'utilisation de condensateurs. Dans un autre mode de réalisation, l'amplificateur de détection utilise une synchronisation inclinée pour le signal de référence afin d'augmenter la marge par laquelle un " 0 " ou "1" sont détectés à partir du courant prélevé par la cellule sélectionnée par rapport à la cellule de référence. Dans un autre mode de réalisation, un amplificateur de détection est utilisé sans aucun décalage de tension.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)