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1. WO2017204676 - THIN-FILM SOLAR MODULE DESIGN, AND PREPARATION METHOD THEREOF

Publication Number WO/2017/204676
Publication Date 30.11.2017
International Application No. PCT/RU2016/000384
International Filing Date 23.06.2016
IPC
H01L 31/076 2012.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic conversion devices
06characterised by at least one potential-jump barrier or surface barrier
075the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
076Multiple junction or tandem solar cells
H01L 31/18 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/20 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
20such devices or parts thereof comprising amorphous semiconductor material
C23C 16/513 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
50using electric discharges
513using plasma jets
CPC
C23C 16/513
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
50using electric discharges
513using plasma jets
H01L 31/076
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
06characterised by at least one potential-jump barrier or surface barrier
075the potential barriers being only of the PIN type
076Multiple junction or tandem solar cells
H01L 31/18
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/20
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
20such devices or parts thereof comprising amorphous semiconductor materials
Y02E 10/548
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
10Energy generation through renewable energy sources
50Photovoltaic [PV] energy
548Amorphous silicon PV cells
Y02P 70/50
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
70Climate change mitigation technologies in the production process for final industrial or consumer products
50Manufacturing or production processes characterised by the final manufactured product
Applicants
  • ОБЩЕСТВО С ОГРАНИЧЕННОЙ ОТВЕТСТВЕННОСТЬЮ "НТЦ ТОНКОПЛЕНОЧНЫХ ТЕХНОЛОГИЙ В ЭНЕРГЕТИКЕ" R&D CENTER OF THIN FILM TECHNOLOGIES IN ENERGETICS [RU]/[RU]
Inventors
  • КУКИН, Алексей Валерьевич KUKIN, Aleksei Valerievich
  • ТЕРУКОВ, Евгений Иванович TERUKOV, Evgenii Ivanovich
  • АНДРОНИКОВ, Дмитрий Александрович ANDRONIKOV, Dmitrii Aleksandrovich
  • АБРАМОВ, Алексей Станиславович ABRAMOV, Aleksei Stanislavovich
  • СЕМЕНОВ, Александр Вячеславович SEMENOV, Aleksandr Vyacheslavovich
Agents
  • КОТЛОВ, Дмитрй Владимирович KOTLOV, Dmitrij Vladimirovich
Priority Data
201611979423.05.2016RU
Publication Language Russian (RU)
Filing Language Russian (RU)
Designated States
Title
(EN) THIN-FILM SOLAR MODULE DESIGN, AND PREPARATION METHOD THEREOF
(FR) STRUCTURE DE MODULE SOLAIRE À PAROI FINE ET PROCÉDÉ DE FABRICATION
(RU) КОНСТРУКЦИЯ ТОНКОПЛЕНОЧНОГО СОЛНЕЧНОГО МОДУЛЯ И СПОСОБ ЕЕ ИЗГОТОВЛЕНИЯ
Abstract
(EN)
The invention relates to the structure of a dual-cascade thin-film solar module (photoconverter) on the basis of amorphous and microcrystalline silicon. A thin-film solar module design consists of, disposed successively: a front glass substrate; a front contact layer made of a transparent conductive oxide; a non-stoichiometric p-type silicon carbide sublayer; an amorphous cascade and a microcrystalline cascade, connected in series, wherein the amorphous cascade consists of a p-layer on the basis of a layer of silicon nanoparticles in a matrix of hydrogenated non-stoichiometric silicon oxide doped with boron (nc-Si/SiOx:H), a layer-itself, on the basis of amorphous hydrogenated silicon (a-Si:H), and an n-layer on the basis of a layer of silicon nanoparticles in a matrix of hydrogenated non-stoichiometric silicon oxide doped with phosphorus (nc-Si/SiOx:H), and wherein the microcrystalline cascade consists of a pin structure on the basis of microcrystalline silicon (uc-Si:H); a rear contact layer; longitudinal and transverse electric contact bars; a rear reflector playing a sealing role, installed together with a rear glass; and a switching box. The invention allows for reducing degradation while decreasing the thickness of the amorphous silicon layer-itself, increasing stabilized efficiency, and increasing quantum efficiency, by means of decreasing losses due to absorption.
(FR)
L'invention concerne une structure de module solaire à paroi fine à double cascade (photoconvertisseur) à base de silicium amorphe et microcristallin. Cette structure de module solaire à paroi fine comprend les éléments suivants disposés en série: un substrat de verre frontal; une couche de contact frontale en oxyde transparent conducteur; une sous-couche de carbure de silicium non stœchiométrique de type p; une cascade amorphe et une cascade microcristalline connectées en série, la cascade amorphe comprenant une couche p à base d'une couche de nanoparticules de silicium dans une matrice d'oxyde de silicium non stœchiométrique hydrogéné et dopé par du bore (nc-Si/SiOx:H), une couche propre à base de silicium hydrogéné amorphe (a-Si:H) et une couche n à base d'une couche de nanoparticules de silicium dans une matrice d'oxyde de silicium non stœchiométrique hydrogéné et dopé par du phosphore (nc-Si/SiOx:H), tandis que la cascade microcristalline comprend une structure pin à base de silicium microcristallin (uc-Si:H); une couche de contact arrière; des bus de contact électriques longitudinaux et transversaux; un réflecteur arrière assurant une fonction d'étanchéité et disposé avec un verre arrière; et un boîtier de commutation. Cette invention permet de réduire la dégradation lors de la diminution de l'épaisseur de la couche de silicium amorphe, d'augmenter l'efficacité stabilisée, d'augmenter l'efficacité quantique grâce à la diminution des pertes par absorption.
(RU)
Изобретение относится к структуре двухкаскадного тонкопленочного солнечного модуля (фотопреобразователя) на основе аморфного и микрокристаллического кремния. Конструкция тонкопленочного солнечного модуля состоит из последовательно расположенных: фронтальной стеклянной подложки; фронтального контактного слоя из прозрачного проводящего оксида; подслоя нестехиометрического карбида кремния р-типа; аморфного и микрокристаллического каскадов, соединенных последовательно, при этом аморфный каскад состоит из p-слоя на основе слоя наночастиц кремния в матрице гидрогенизированного нестехиометрического оксида кремния легированного бором (nc-Si/SiOx:H), собственного слоя на основе аморфного гидрогенизированного кремния (a-Si:H) и n-слоя на основе слоя наночастиц кремния в матрице гидрогенизированного нестехиометрического оксида кремния легированного фосфором (nc-Si/SiOx:H), а микрокристаллический каскад состоит из pin структуры на основе микрокристаллического кремния (uc-Si:H); тыльного контактного слоя; продольных и поперечных электрических контактных шин; тыльного отражателя выполняющего герметизирующую функцию, установленного вместе с тыльным стеклом; коммутационной коробки. Изобретение позволяет снизить деградацию при снижении толщины собственного слоя аморфного кремния, повысить стабилизированную эффективность, повысить квантовую эффективность, за счет снижения потерь от поглощения.
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