WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Search
 
Browse
 
Translate
 
Options
 
News
 
Login
 
Help
 
Machine translation
1. (WO2017204035) POLISHING SOLUTION, METHOD FOR PRODUCING POLISHING SOLUTION, POLISHING SOLUTION STOCK SOLUTION, AND CHEMOMECHANICAL POLISHING METHOD
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.:    WO/2017/204035    International Application No.:    PCT/JP2017/018353
Publication Date: 30.11.2017 International Filing Date: 16.05.2017
IPC:
C09K 3/14 (2006.01), B24B 37/00 (2012.01), C09G 1/02 (2006.01), H01L 21/304 (2006.01)
Applicants: FUJIFILM CORPORATION [JP/JP]; 26-30, Nishiazabu 2-chome, Minato-ku, Tokyo 1068620 (JP)
Inventors: KAMIMURA Tetsuya; (JP)
Agent: WATANABE Mochitoshi; (JP).
MIWA Haruko; (JP).
ITOH Hideaki; (JP).
MITSUHASHI Fumio; (JP)
Priority Data:
2016-105434 26.05.2016 JP
Title (EN) POLISHING SOLUTION, METHOD FOR PRODUCING POLISHING SOLUTION, POLISHING SOLUTION STOCK SOLUTION, AND CHEMOMECHANICAL POLISHING METHOD
(FR) SOLUTION DE POLISSAGE, PROCÉDÉ DE PRODUCTION DE SOLUTION DE POLISSAGE, SOLUTION DE RÉSERVE DE SOLUTION DE POLISSAGE, ET PROCÉDÉ DE POLISSAGE CHIMICO-MÉCANIQUE
(JA) 研磨液、研磨液の製造方法、研磨液原液、及び化学的機械的研磨方法
Abstract: front page image
(EN)The invention provides a polishing solution that can obtain an excellent polishing rate when applied to CMP and is less likely to cause dishing of the surface to be polished, a method for producing a polishing solution, a polishing solution stock solution, and a chemomechanical polishing method. This polishing solution is a polishing solution for chemomechanical polishing that contains colloidal silica, an amino acid, two or more azole compounds, and an oxidizing agent, wherein a reaction layer having a thickness of 1-20 nm and containing copper atoms is formed on a copper substrate when the polishing solution and a copper substrate are brought into contact for 24 hours.
(FR)L'invention concerne une solution de polissage, qui peut obtenir un excellent taux de polissage lors de l'application à CMP et est moins susceptible d'entraîner un bombage de la surface à polir, un procédé de production d'une solution de polissage, une solution de réserve de solution de polissage, et un procédé de polissage chimico-mécanique. Cette solution de polissage est une solution de polissage pour un polissage chimico-mécanique qui contient de la silice colloïdale, un acide aminé, au moins deux composés d'azole et un agent oxydant, une couche de réaction ayant une épaisseur de 1-20 nm et contenant des atomes de cuivre étant formée sur un substrat de cuivre lorsque la solution de polissage et un substrat de cuivre sont amenés en contact pendant 24 heures.
(JA)本発明は、CMPに適用した場合、優れた研磨速度を得ることができ、かつ被研磨面にディッシングが発生しにくい研磨液、研磨液の製造方法、研磨液原液、及び化学的機械的研磨方法を提供する。本発明の研磨液はコロイダルシリカと、アミノ酸と、2種以上のアゾール化合物と、酸化剤と、を含有する化学的機械的研磨用の研磨液であって、研磨液と銅基板とを24時間接触させた際に、銅基板上に、銅原子を含有する厚さ1~20nmの反応層が形成される。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)