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1. (WO2017203876) HIGH-FREQUENCY-PROBE POSITION CORRECTION TECHNOLOGY
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Pub. No.: WO/2017/203876 International Application No.: PCT/JP2017/014970
Publication Date: 30.11.2017 International Filing Date: 12.04.2017
IPC:
G01R 27/28 (2006.01) ,G01R 1/073 (2006.01) ,G01R 31/28 (2006.01) ,G01R 35/00 (2006.01)
G PHYSICS
01
MEASURING; TESTING
R
MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
27
Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
28
Measuring attenuation, gain, phase shift, or derived characteristics of electric four-pole networks, i.e. two-port networks; Measuring transient response
G PHYSICS
01
MEASURING; TESTING
R
MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
1
Details of instruments or arrangements of the types covered by groups G01R5/-G01R13/122
02
General constructional details
06
Measuring leads; Measuring probes
067
Measuring probes
073
Multiple probes
G PHYSICS
01
MEASURING; TESTING
R
MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
31
Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
28
Testing of electronic circuits, e.g. by signal tracer
G PHYSICS
01
MEASURING; TESTING
R
MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
35
Testing or calibrating of apparatus covered by the other groups of this subclass
Applicants: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY[JP/JP]; 3-1, Kasumigaseki 1-chome, Chiyoda-ku, Tokyo 1008921, JP
Inventors: SAKAMAKI Ryo; JP
Priority Data:
2016-10619227.05.2016JP
2016-18927728.09.2016JP
Title (EN) HIGH-FREQUENCY-PROBE POSITION CORRECTION TECHNOLOGY
(FR) TECHNOLOGIE DE CORRECTION DE POSITION DE SONDE À HAUTE FRÉQUENCE
(JA) 高周波プローブ位置補正技術
Abstract:
(EN) In high-frequency-probe positioning in position calibration carried out in conventional high-frequency characteristic inspection, a prescribed standard pattern for standard alignment is used and probe positions are determined using a microscope and the human eye. However, measurement is influenced by variation in the contact positions of high-frequency probes and a DUT, variation in the amount of pressing of the DUT, and electromagnetic fields spreading in space, and each of these factors is highly dependent on how the measurement work is carried out. Accuracy has been 10 μm at most, and there have been problems with the reliability of measurement results and the reproducibility of measurements. In the present invention, S-parameter feedback measurement values measured while emitting high-frequency waves and finely moving high-frequency probe positions in the Z direction, X direction, and Y direction in relation to a prescribed reference device are analyzed to determine probe positions in each direction, and probe positions at the electrical center position of a planar circuit are calibrated with an accuracy of 2 μm or less.
(FR) Dans le positionnement de sonde à haute fréquence dans l'étalonnage de position effectué dans une inspection de caractéristique de haute fréquence conventionnelle, un motif standard prescrit pour un alignement standard est utilisé et des positions de sonde sont déterminées au moyen d'un microscope et de l'œil humain. Cependant, la mesure est influencée par la variation des positions de contact des sondes à haute fréquence et d'un DUT, la variation de la quantité de pression du DUT, et les champs électromagnétiques se propageant dans l'espace, et chacun de ces facteurs est hautement dépendant de la façon selon laquelle le travail de mesure est effectué. La précision était de 10 µm au plus, et il existait des problèmes de fiabilité des résultats de mesure et de reproductibilité des mesures. Dans la présente invention, des valeurs de mesure de rétroaction de paramètre S mesurées en émettant des ondes à haute fréquence et en déplaçant finement des positions de sonde à haute fréquence dans la direction Z, la direction X et la direction Y par rapport à un dispositif de référence prescrit sont analysées pour déterminer des positions de sonde dans chaque direction, et des positions de sonde à la position de centre électrique d'un circuit plan sont étalonnées avec une précision de 2 µm ou moins.
(JA) 従来高周波特性検査で行われる位置の校正における高周波プローブ位置決めは、基準位置合わせのための所定の基準パターンを利用して、顕微鏡によって、人の目でプローブ位置を決定していたが、測定には高周波プローブとDUTのコンタクト位置のばらつき、DUTへの押し付け量のばらつき、空間中に拡がる電磁界の影響があり個々の測定作業依存性が高く、精度はせいぜい10μmであり測定結果の信頼性や測定の再現性に問題があった。 所定の基準器に対して高周波プローブ位置をZ方向、X方向、Y方向に各微動させながら高周波を放出して測定したSパラメータのフィードバック測定値を解析して各方向でのプローブ位置を決定し、2μm以下の精度で平面回路の電気的中心位置となるプローブ位置を校正する。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)