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1. (WO2017203775) RAW MATERIAL FOR FORMING THIN FILM AND METHOD FOR PRODUCING THIN FILM
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.:    WO/2017/203775    International Application No.:    PCT/JP2017/007483
Publication Date: 30.11.2017 International Filing Date: 27.02.2017
IPC:
C23C 16/40 (2006.01), H01L 21/316 (2006.01)
Applicants: ADEKA CORPORATION [JP/JP]; 2-35, Higashiogu 7-chome, Arakawa-ku, Tokyo 1168554 (JP)
Inventors: SATO, Hiroki; (JP).
YAMADA, Naoki; (JP).
SHIRATORI, Tsubasa; (JP).
SATO, Haruyoshi; (JP)
Agent: SOGA, Michiharu; (JP).
KAJINAMI, Jun; (JP).
OHYA, Kazuhiro; (JP)
Priority Data:
2016-102628 23.05.2016 JP
Title (EN) RAW MATERIAL FOR FORMING THIN FILM AND METHOD FOR PRODUCING THIN FILM
(FR) MATIÈRE PREMIÈRE DESTINÉE À FORMER UN FILM MINCE ET PROCÉDÉ DE PRODUCTION D'UN FILM MINCE
(JA) 薄膜形成用原料及び薄膜の製造方法
Abstract: front page image
(EN)Provided is a raw material which is for forming a thin film and contains a compound represented by general formula (1) below, where R1 represents a linear or branched alkyl group having 2-4 carbon atoms, R2-R5 each independently represent a linear or branched alkyl group having 1-4 carbon atoms, A represents an alkanediyl group having 1-4 carbon atoms, and M represents titanium, zirconium, or hafnium. When M is zirconium, A is an alkanediyl group having 3 or 4 carbon atoms. When M is titanium and hafnium, A is preferably an alkanediyl group having 2 or 3 carbon atoms. When M is zirconium, A is preferably an alkanediyl group having 3 carbon atoms.
(FR)L'invention concerne une matière première destinée à former un film mince et contenant un composé représenté par la formule générale (1) ci-dessous. Dans ladite formule, R1 représente un groupe alkyle linéaire ou ramifié comportant 2 à 4 atomes de carbone; R2 à R5 représentent chacun, indépendamment, un groupe alkyle linéaire ou ramifié comportant 1 à 4 atomes de carbone; A représente un groupe alcanediyle comportant 1 à 4 atomes de carbone; et M représente titane, zirconium ou hafnium. Lorsque M est zirconium, A est un groupe alcanediyle comportant 3 ou 4 atomes de carbone. Lorsque M est titane et hafnium, A est, de préférence, un groupe alcanediyle comportant 2 ou 3 atomes de carbone. Lorsque M est zirconium, A est, de préférence, un groupe alcanediyle comportant 3 atomes de carbone.
(JA)下記一般式(1)で表される化合物を含有してなる薄膜形成用原料。式中、R1は炭素原子数2~4の直鎖又は分岐状のアルキル基を表し、R2~R5は各々独立に炭素原子数1~4の直鎖又は分岐状のアルキル基を表し、Aは炭素原子数1~4のアルカンジイル基を表し、Mはチタン、ジルコニウム又はハフニウムを表す。ただし、Mがジルコニウムの場合は、Aは炭素原子数3又は4のアルカンジイル基である。Mがチタン及びハフニウムである場合、Aは炭素原子数2又は3のアルカンジイル基であることが好ましい。Mがジルコニウムである場合、Aは炭素原子数3のアルカンジイル基であることが好ましい。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)