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1. (WO2017202329) LIGHT-EMITTING DIODE AND MANUFACTURING METHOD THEREOF
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Pub. No.: WO/2017/202329 International Application No.: PCT/CN2017/085656
Publication Date: 30.11.2017 International Filing Date: 24.05.2017
IPC:
H01L 33/00 (2010.01) ,H01L 33/14 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
14
with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
Applicants:
厦门三安光电有限公司 XIAMEN SAN'AN OPTOELECTRONICS CO., LTD. [CN/CN]; 中国福建省厦门市 同安区洪塘镇民安大道841-899号 No.841-899, Min An Road Hongtang Town, Tongan District Xiamen, Fujian 361100, CN
Inventors:
舒立明 SHU, Liming; CN
叶大千 YE, Daqian; CN
张东炎 ZHANG, Dongyan; CN
高文浩 GAO, Wenhao; CN
刘晓峰 LIU, Xiaofeng; CN
吴超瑜 WU, Chaoyu; CN
王笃祥 WANG, Duxiang; CN
Priority Data:
201610350858.X25.05.2016CN
201610350859.425.05.2016CN
Title (EN) LIGHT-EMITTING DIODE AND MANUFACTURING METHOD THEREOF
(FR) DIODE ÉLECTROLUMINESCENTE ET SON PROCÉDÉ DE FABRICATION
(ZH) 发光二极管及其制作方法
Abstract:
(EN) Provided are a light-emitting diode and a manufacturing method thereof. The light-emitting diode sequentially comprises, from the bottom to the top, an N-type layer (4), a light-emitting layer (5), an electron-blocking layer (6), and a P-type layer (7). The electron-blocking layer (6) comprises, from the bottom to the top, an AlGaN layer (601), a three-dimensional P-type gallium nitride insertion layer (602) and a two-dimensional AlGaN combined layer (603). The electron-blocking layer of the light-emitting diode can effectively block electrons and prevent a problem of low activation efficiency of an Mg dopant in a P-type AlGaN layer. Cone-shaped structures of the three-dimensional P-type gallium nitride spacer layer form irregular barrier depressions. The P-type cone-shaped structures improve hole injection efficiency, thereby enhancing the hole injection efficiency.
(FR) La présente invention concerne une diode électroluminescente et son procédé de fabrication. La diode électroluminescente comprend séquentiellement, du bas vers le haut, une couche de type N (4), une couche électroluminescente (5), une couche de blocage d'électrons (6) et une couche de type P (7). La couche de blocage d'électrons (6) comprend, du bas vers le haut, une couche d'AlGaN (601), une couche d'insertion de nitrure de gallium de type P tridimensionnelle (602) et une couche combinée d'AlGaN bidimensionnelle (603). La couche de blocage d'électrons de la diode électroluminescente peut efficacement bloquer les électrons et empêcher un problème de faible efficacité d'activation d'un dopant Mg dans une couche d'AlGaN de type P. Les structures en forme de cône de la couche d'espacement de nitrure de gallium de type P tridimensionnelle forment des dépressions de barrière irrégulières. Les structures en forme de cône de type P améliorent l'efficacité de l'injection de trous, améliorant ainsi l'efficacité de l'injection de trous.
(ZH) 一种发光二极管及其制作方法,其中发光二极管由下至上依次包括N型层(4)、发光层(5)、电子阻挡层(6)、P型层(7);其中电子阻挡层由下至上依次为AlGaN层(601)、三维P型氮化镓插入层(602)、二维AlGaN合并层(603)。发光二极管的电子阻挡层在实现了电子有效阻挡的同时避免了P型AlGaN层中Mg掺活化效率低问题,三维P型氮化镓插入层设计形成的锥状结构形成了非规则的势垒低谷,同时P型锥状结构对空穴注入效率具有一定的放大、加速功效,提升了空穴注入效率。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)