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1. (WO2017201888) TETRAHERTZ NEAR-FIELD DETECTOR, PHOTOCONDUCTIVE ANTENNA, AND MANUFACTURING METHOD THEREOF
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Pub. No.: WO/2017/201888 International Application No.: PCT/CN2016/094660
Publication Date: 30.11.2017 International Filing Date: 11.08.2016
IPC:
H01Q 1/22 (2006.01) ,G01N 21/3586 (2014.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
Q
AERIALS
1
Details of, or arrangements associated with, aerials
12
Supports; Mounting means
22
by structural association with other equipment or articles
[IPC code unknown for G01N 21/3586]
Applicants: SHENZHEN TERAHERTZ SYSTEM EQUIPMENT CO., LTD.[CN/CN]; The East Part of 2nd Floor, No.37 Building Chentian Industrial Zone, 1st Baotian Road Xixiang Street, Bao'an District Shenzhen, Guangdong 518102, CN
Inventors: PENG, Shichang; CN
PAN, Yi; CN
LI, Chen; CN
DING, Qing; CN
Agent: ADVANCE CHINA IP LAW OFFICE; Room 3901 No.85 Huacheng Avenue, Tianhe District Guangzhou, Guangdong 510623, CN
Priority Data:
201610349988.124.05.2016CN
Title (EN) TETRAHERTZ NEAR-FIELD DETECTOR, PHOTOCONDUCTIVE ANTENNA, AND MANUFACTURING METHOD THEREOF
(FR) DÉTECTEUR EN CHAMP PROCHE TÉRAHERTZ, ET ANTENNE PHOTOCONDUCTRICE ET SON PROCÉDÉ DE FABRICATION
(ZH) 太赫兹近场探测器、光电导天线及其制作方法
Abstract:
(EN) The present invention relates to a tetrahertz near-field detector, photoconductive antenna, and manufacturing method of the photoconductive antenna. The photoconductive antenna comprises: a substrate; a low-temperature gallium arsenide waveplate layer adhered to the substrate; a dipole antenna adhered to the low-temperature gallium arsenide waveplate layer, the dipole antenna being a low-temperature gallium arsenide sheet; an insulation layer provided on the dipole antenna; and a metal plate having a hole and provided on the insulation layer. The metal plate having a hole can significantly attenuate a background noise signal, thus improving the spatial resolution of near-field detection.
(FR) La présente invention concerne un détecteur en champ proche térahertz, une antenne photoconductrice et un procédé de fabrication de l'antenne photoconductrice. L'antenne photoconductrice comprend : un substrat; une couche de lame à retard en arséniure de gallium basse température collée au substrat; une antenne dipôle collée à la couche de lame à retard en arséniure de gallium basse température, l'antenne dipôle étant une feuille d'arséniure de gallium basse température; une couche d'isolation disposée sur l'antenne dipôle; et une plaque métallique comportant un trou et disposée sur la couche d'isolation. La plaque métallique comportant un trou peut atténuer sensiblement un signal de bruit de fond, améliorant ainsi la résolution spatiale de la détection en champ proche.
(ZH) 本发明涉及一种太赫兹近场探测器和光电导天线,以及该光电导天线的制作方法。所述光电导天线包括衬底,粘合在衬底上的低温砷化镓波片层,粘合在低温砷化镓波片层上的偶极天线,偶极天线为低温砷化镓薄片,设置在偶极天线上的绝缘层,以及设置在绝缘层上的带孔金属板。带孔金属板能使背景噪声信号大幅衰减,提高近场探测的空间分辨率。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)