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1. (WO2017201709) SOLID POWER SEMICONDUCTOR FIELD EFFECT TRANSISTOR STRUCTURE

Pub. No.:    WO/2017/201709    International Application No.:    PCT/CN2016/083456
Publication Date: Fri Dec 01 00:59:59 CET 2017 International Filing Date: Fri May 27 01:59:59 CEST 2016
IPC: H01L 29/78
H01L 29/06
H01L 27/02
H01L 27/06
Applicants: ZHONGSHAN HKG TECHNOLOGIES LIMITED
中山港科半导体科技有限公司
Inventors: ZHOU, Xianda
周贤达
XU, Yuanmei
徐远梅
SHU, Xiaoping
舒小平
Title: SOLID POWER SEMICONDUCTOR FIELD EFFECT TRANSISTOR STRUCTURE
Abstract:
Provided is a solid power semiconductor field effect transistor (FET) structure, relating to structures of power semiconductor devices. Provided is a solid high-density grid-control tunnel-junction power FET structure. The structure is characterized in that: multiple evenly arranged light-doped JFET regions (n-312) of a first conduction type are provided at the top of a drift region (313) of the first conduction type and are laterally surrounded by a heavy-doped source region (p+311) of a second conduction type. The structure has the effect of reducing the specific on-resistance.