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|1. (WO2017201709) SOLID POWER SEMICONDUCTOR FIELD EFFECT TRANSISTOR STRUCTURE|
|Applicants:||ZHONGSHAN HKG TECHNOLOGIES LIMITED
|Title:||SOLID POWER SEMICONDUCTOR FIELD EFFECT TRANSISTOR STRUCTURE|
Provided is a solid power semiconductor field effect transistor (FET) structure, relating to structures of power semiconductor devices. Provided is a solid high-density grid-control tunnel-junction power FET structure. The structure is characterized in that: multiple evenly arranged light-doped JFET regions (n-312) of a first conduction type are provided at the top of a drift region (313) of the first conduction type and are laterally surrounded by a heavy-doped source region (p+311) of a second conduction type. The structure has the effect of reducing the specific on-resistance.