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Machine translation
1. (WO2017201550) IGBT HAVING IMPROVED CLAMP ARRANGEMENT
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.:    WO/2017/201550    International Application No.:    PCT/US2017/041063
Publication Date: 23.11.2017 International Filing Date: 07.07.2017
IPC:
H01L 27/07 (2006.01), H01L 29/739 (2006.01)
Applicants: LITTELFUSE, INC. [US/US]; 8755 West Higgins Road Suite 500 Chicago, Illinois 60631 (US)
Inventors: YERGER, Justin; (US)
Agent: DAISAK, Daniel N.; (US)
Priority Data:
62/337,768 17.05.2016 US
15/641,877 05.07.2017 US
Title (EN) IGBT HAVING IMPROVED CLAMP ARRANGEMENT
(FR) TRANSISTOR BIPOLAIRE À GRILLE ISOLÉE À DISPOSITIF DE SERRAGE AMÉLIORÉ
Abstract: front page image
(EN)In one embodiment, an insulated gate bipolar transistor (IGBT) device may include an NMOS portion and a PNP portion, where the PNP portion is coupled to the NMOS portion. The PNP portion may include a base and a collector. The IGBT may further include a flyback clamp, where the flyback clamp is coupled between the base and the collector of the PNP portion.
(FR)Selon un mode de réalisation, un dispositif de transistor bipolaire à grille isolée peut comprendre une partie NMOS et une partie PNP, la partie PNP étant couplée à la partie NMOS. La partie PNP peut comprendre une base et un collecteur. Le transistor bipolaire à grille isolée peut en outre comprendre une pince de retour, la pince de retour étant couplée entre la base et le collecteur de la partie PNP.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)