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1. (WO2017200845) METHOD OF FORMING A P-TYPE LAYER FOR A LIGHT EMITTING DEVICE

Pub. No.:    WO/2017/200845    International Application No.:    PCT/US2017/032234
Publication Date: Fri Nov 24 00:59:59 CET 2017 International Filing Date: Fri May 12 01:59:59 CEST 2017
IPC: H01L 29/02
H01L 21/306
H01L 21/02
H01L 21/324
Applicants: LUMILEDS LLC
Inventors: WILDESON, Isaac
NELSON, Erik Charles
DEB, Parijat
Title: METHOD OF FORMING A P-TYPE LAYER FOR A LIGHT EMITTING DEVICE
Abstract:
In a method according to embodiments of the invention, a semiconductor structure including a III-nitride light emitting layer disposed between a p-type region and an n-type region is grown. The p-type region is buried within the semiconductor structure. A trench is formed in the semiconductor structure. The trench exposes the p-type region. After forming the trench, the semiconductor structure is annealed.