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1. (WO2017200211) SLURRY COMPOSITION FOR POLISHING HIGH STEPPED REGION

Pub. No.:    WO/2017/200211    International Application No.:    PCT/KR2017/004041
Publication Date: Fri Nov 24 00:59:59 CET 2017 International Filing Date: Sat Apr 15 01:59:59 CEST 2017
IPC: C09G 1/02
C09K 3/14
H01L 21/321
H01L 21/3105
Applicants: KCTECH CO.,LTD.
주식회사 케이씨텍
Inventors: KIM, Jung Yoon
김정윤
HWANG, Jun Ha
황준하
KIM, Sun Kyoung
김선경
PARK, Kwang Soo
박광수
Title: SLURRY COMPOSITION FOR POLISHING HIGH STEPPED REGION
Abstract:
The present invention relates to a slurry composition for polishing a high stepped region. The slurry composition for polishing a high stepped region according to an embodiment of the present invention comprises: a polishing liquid containing metal oxide polishing particles dispersed by positive charges; and an additive liquid containing a polymer comprising at least one element capable of being activated as a positive charge, wherein the polishing selection ratio of the stepped region removal rate in an oxide film pattern wafer having convex portions and concave portions and the stepped region removal rate in an oxide film flat wafer is at least 5:1.