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|1. (WO2017200211) SLURRY COMPOSITION FOR POLISHING HIGH STEPPED REGION|
|Inventors:||KIM, Jung Yoon
HWANG, Jun Ha
KIM, Sun Kyoung
PARK, Kwang Soo
|Title:||SLURRY COMPOSITION FOR POLISHING HIGH STEPPED REGION|
The present invention relates to a slurry composition for polishing a high stepped region. The slurry composition for polishing a high stepped region according to an embodiment of the present invention comprises: a polishing liquid containing metal oxide polishing particles dispersed by positive charges; and an additive liquid containing a polymer comprising at least one element capable of being activated as a positive charge, wherein the polishing selection ratio of the stepped region removal rate in an oxide film pattern wafer having convex portions and concave portions and the stepped region removal rate in an oxide film flat wafer is at least 5:1.