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1. (WO2017200211) SLURRY COMPOSITION FOR POLISHING HIGH STEPPED REGION
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.:    WO/2017/200211    International Application No.:    PCT/KR2017/004041
Publication Date: 23.11.2017 International Filing Date: 14.04.2017
IPC:
C09G 1/02 (2006.01), C09K 3/14 (2006.01), H01L 21/321 (2006.01), H01L 21/3105 (2006.01)
Applicants: K.C.TECH CO., LTD [KR/KR]; 39, Je2gongdan 2-gil, Miyang-myeon Anseong-si Gyeonggi-do 17599 (KR)
Inventors: KIM, Jung Yoon; (KR).
HWANG, Jun Ha; (KR).
KIM, Sun Kyoung; (KR).
PARK, Kwang Soo; (KR)
Agent: MUHANN PATENT & LAW FIRM; (Myeonglim Building, Nonhyeon-dong) 5th Floor, 9 Hakdong-ro 3-gil Gangnam-gu Seoul 06044 (KR)
Priority Data:
10-2016-0059622 16.05.2016 KR
Title (EN) SLURRY COMPOSITION FOR POLISHING HIGH STEPPED REGION
(FR) COMPOSITION DE SUSPENSION POUR LE POLISSAGE D'UNE ZONE HAUTEMENT ÉTAGÉE
(KO) 고단차 연마용 슬러리 조성물
Abstract: front page image
(EN)The present invention relates to a slurry composition for polishing a high stepped region. The slurry composition for polishing a high stepped region according to an embodiment of the present invention comprises: a polishing liquid containing metal oxide polishing particles dispersed by positive charges; and an additive liquid containing a polymer comprising at least one element capable of being activated as a positive charge, wherein the polishing selection ratio of the stepped region removal rate in an oxide film pattern wafer having convex portions and concave portions and the stepped region removal rate in an oxide film flat wafer is at least 5:1.
(FR)La présente invention concerne une composition de suspension pour le polissage d'une zone hautement étagée. Selon un mode de réalisation de la présente invention, la composition de suspension pour le polissage d'une zone hautement étagée comprend : un liquide de polissage contenant des particules de polissage d'oxyde métallique dispersées par des charges positives ; et un liquide additif contenant un polymère comprenant au moins un élément pouvant être activé en tant que charge positive, le rapport de sélection de polissage du taux d'élimination de la zone étagée dans une tranche de motif de film d'oxyde présentant des parties convexes et des parties concaves et du taux d'élimination de la zone étagée dans une tranche plate de film d'oxyde étant d'au moins 5:1.
(KO)본 발명은 고단차 연마용 슬러리 조성물에 관한 것으로서, 본 발명의 일 실시예에 따른 고단차 연마용 슬러리 조성물은 양전하로 분산된 금속산화물 연마입자를 포함하는 연마액; 및 양전하로 활성화될 수 있는 원소를 하나 이상 포함하는 고분자 중합체를 포함하는 첨가액;을 포함하고, 볼록부와 오목부를 갖는 산화막 패턴 웨이퍼에서의 단차 제거 속도와 산화막 평판 웨이퍼에서의 제거 속도의 연마 선택비가 5:1 이상인 것이다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Korean (KO)
Filing Language: Korean (KO)