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Pub. No.: WO/2017/199679 International Application No.: PCT/JP2017/015874
Publication Date: 23.11.2017 International Filing Date: 20.04.2017
IPC:
H01L 29/78 (2006.01) ,H01L 29/739 (2006.01) ,H01L 29/861 (2006.01) ,H01L 29/868 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
70
Bipolar devices
72
Transistor-type devices, i.e. able to continuously respond to applied control signals
739
controlled by field effect
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
86
controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
861
Diodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
86
controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
861
Diodes
868
PIN diodes
Applicants: DENSO CORPORATION[JP/JP]; 1-1, Showa-cho, Kariya-city, Aichi 4488661, JP
Inventors: MIZUKAMI Taku; JP
Agent: YOU-I PATENT FIRM; Nagoya Nishiki City Bldg. 4F 1-6-5, Nishiki, Naka-ku, Nagoya-shi, Aichi 4600003, JP
Priority Data:
2016-09887517.05.2016JP
Title (EN) SEMICONDUCTOR DEVICE
(FR) DISPOSITIF À SEMI-CONDUCTEUR
(JA) 半導体装置
Abstract:
(EN) A semiconductor device in which an IGBT region (1) including an IGBT element (1a) and a FWD region (2) including a FWD element (2a) are formed on a common semiconductor substrate (10), wherein a cathode layer (22) is formed with a carrier injection layer (24) which is electrically connected to a second electrode (23) and constitutes a PN junction with a field stop layer (20). When, in a state in which a forward electric current is flowing through the FWD element (2a), the electric current is cut off, a first carrier in the FWD element (2a) passes through the field stop layer (20) positioned on the carrier injection layer (24) and flows into the cathode layer (22), whereby a second carrier is injected from the second electrode (23) into a drift layer (11) via the carrier injection layer (24).
(FR) L'invention concerne un dispositif à semi-conducteur dans lequel une région IGBT (1) comprenant un élément IGBT (1a) et une région FWD (2) comprenant un élément FWD (2a) sont formées sur un substrat semi-conducteur commun (10), une couche de cathode (22) étant formée avec une couche d'injection de support (24) qui est électriquement connectée à une seconde électrode (23) et constitue une jonction PN avec une couche d'arrêt de champ (20). Lorsque, dans un état dans lequel un courant électrique vers l'avant circule à travers l'élément FWD (2a), le courant électrique est coupé, un premier support dans l'élément FWD (2a) passe à travers la couche d'arrêt de champ (20) positionnée sur la couche d'injection de support (24) et s'écoule dans la couche de cathode (22), un second support étant ainsi injecté depuis la seconde électrode (23) dans une couche de dérive (11) par l'intermédiaire de la couche d'injection de support (24).
(JA) IGBT素子(1a)を有するIGBT領域(1)と、FWD素子(2a)を有するFWD領域(2)が共通の半導体基板(10)に形成されている半導体装置において、カソード層(22)に、第2電極(23)と電気的に接続されると共に、フィールドストップ層(20)とPN接合を構成するキャリア注入層(24)を形成する。そして、FWD素子(2a)に順方向電流が流れている状態から当該電流を遮断する際、FWD素子(2a)内の第1キャリアがキャリア注入層(24)上に位置するフィールドストップ層(20)を通過してカソード層(22)へと流れることにより、第2電極(23)からキャリア注入層(24)を介して第2キャリアがドリフト層(11)に注入されるようにする。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)