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1. (WO2017198776) COMPONENT HAVING ENHANCED EFFICIENCY AND METHOD FOR PRODUCTION THEREOF
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2017/198776 International Application No.: PCT/EP2017/062000
Publication Date: 23.11.2017 International Filing Date: 18.05.2017
IPC:
H01L 33/02 (2010.01) ,H01L 33/06 (2010.01) ,H01L 33/14 (2010.01) ,H01L 33/32 (2010.01) ,H01L 33/00 (2010.01) ,H01L 33/04 (2010.01) ,H01L 33/24 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
04
with a quantum effect structure or superlattice, e.g. tunnel junction
06
within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
14
with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
26
Materials of the light emitting region
30
containing only elements of group III and group V of the periodic system
32
containing nitrogen
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
04
with a quantum effect structure or superlattice, e.g. tunnel junction
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
20
with a particular shape, e.g. curved or truncated substrate
24
of the light emitting region, e.g. non-planar junction
Applicants: OSRAM OPTO SEMICONDUCTORS GMBH[DE/DE]; Leibnizstr. 4 93055 Regensburg, DE
Inventors: LEHNHARDT, Thomas; DE
BERGBAUER, Werner; DE
OFF, Jürgen; DE
LAHOURCADE, Lise; DE
DRECHSEL, Philipp; DE
Agent: EPPING . HERMANN . FISCHER PATENTANWALTSGESELLSCHAFT MBH; Schloßschmidstr. 5 80639 München, DE
Priority Data:
10 2016 208 717.720.05.2016DE
Title (EN) COMPONENT HAVING ENHANCED EFFICIENCY AND METHOD FOR PRODUCTION THEREOF
(FR) COMPOSANT À EFFICACITÉ AMÉLIORÉE ET SON PROCÉDÉ DE FABRICATION
(DE) BAUELEMENT MIT ERHÖHTER EFFIZIENZ UND VERFAHREN ZU DESSEN HERSTELLUNG
Abstract:
(EN) The invention relates to a component (10) having a semiconductor layer sequence (20), which has a p-conducting semiconductor layer (1), an n-conducting semiconductor layer (2), and an active zone (3) located between them, wherein: in the region of the active zone, on the side of the p-conducting semiconductor layer, indentations (4) are formed, which in each case have facets (41) extending obliquely with respect to a main surface (30) of the active zone, wherein the p-conducting semiconductor layer extends into the indentations, the component has a barrier structure (5), wherein the active zone is arranged between the barrier structure and the n-conducting semiconductor layer, and, with regard to the p-conducting semiconductor layer and the barrier structure, the component is designed in such a way that during operation of the component an injection of positively charged charge carriers via the main surface into the active zone is deliberately made more difficult, such that an injection of positively charged charge carriers via the facets into the active zone is favored. The invention further relates to a method for producing such a component.
(FR) L’invention concerne un composant (10) pourvu d’une succession de couches semi-conductrices (20) comprenant une couche semi-conductrice à conduction p (1), une couche semi-conductrice à conduction n (2) et une zone active intermédiaire (3) : - dans la région de la zone active, du côté de la couche semi-conductrice de conduction p, sont formés des évidements (4) qui comportent chacun des facettes (41) s’étendant obliquement par rapport à une surface principale (30) de la zone active, la couche semi-conductrice de conduction p s’étendant jusque dans les évidements, - le dispositif comprend une structure formant barrière (5), la zone active étant disposée entre la structure formant barrière et la couche semi-conductrice de conduction n, et - le composant est configuré en ce qui concerne la couche semi-conductrice de conduction p et la structure formant barrière de telle sorte que, lors du fonctionnement du composant, une injection de porteurs de charge chargés positivement dans la zone active par le biais de la surface principale est spécifiquement compliquée, de sorte qu’une injection de porteurs de charge chargés positivement dans la zone active par le biais des facettes est favorisée. En outre, l’invention concerne un procédé de fabrication d’un tel composant.
(DE) Es wird ein Bauelement (10) mit einer Halbleiterschichtenfolge (20) aufweisend eine p-leitende Halbleiterschicht (1), eine n-leitende Halbleiterschicht (2) und eine dazwischenliegende aktive Zone (3), wobei: - im Bereich der aktiven Zone, seitens der p-leitenden Halbleiterschicht, Vertiefungen (4) gebildet sind, die jeweils zu einer Hauptfläche (30) der aktiven Zone schräg verlaufende Facetten (41) aufweisen, wobei sich die p-leitende Halbleiterschicht in die Vertiefungen hinein erstreckt, - das Bauelement eine Barrierestruktur (5) aufweist, wobei die aktive Zone zwischen der Barrierestruktur und der n-leitenden Halbleiterschicht angeordnet ist, und - das Bauelement hinsichtlich der p-leitenden Halbleiterschicht und der Barrierestruktur derart ausgeführt ist, dass im Betrieb des Bauelements eine Injektion positiv geladener Ladungsträger über die Hauptfläche in die aktive Zone gezielt erschwert ist, wodurch eine Injektion positiv geladener Ladungsträger über die Facetten in die aktive Zone begünstigt ist. Des Weiteren wird ein Verfahren zur Herstellung eines derartigen Bauelements angegeben.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: German (DE)
Filing Language: German (DE)