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1. (WO2017197915) PHOTOLITHOGRAPHY MASK, MANUFACTURING METHOD THEREOF, AND PHOTOLITHOGRAPHY METHOD
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.:    WO/2017/197915    International Application No.:    PCT/CN2017/070816
Publication Date: 23.11.2017 International Filing Date: 11.01.2017
IPC:
G03F 1/40 (2012.01)
Applicants: BOE TECHNOLOGY GROUP CO., LTD. [CN/CN]; No.10 Jiuxianqiao Road, Chaoyang District Beijing 100015 (CN).
BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD. [CN/CN]; No.8, Xihuanzhonglu, BDA Beijing 100176 (CN)
Inventors: LV, Zhenhua; (CN).
CHEN, Xi; (CN).
WANG, Shijun; (CN).
BAO, Zhiying; (CN).
ZHANG, Yong; (CN).
LI, Yue; (CN).
XIAO, Wenjun; (CN).
XUE, Yanna; (CN).
JIANG, Wenbo; (CN)
Agent: CHINA PATENT AGENT (H.K.) LTD.; 22/F, Great Eagle Centre 23 Harbour Road, Wanchai Hong Kong (CN)
Priority Data:
201610329420.3 18.05.2016 CN
Title (EN) PHOTOLITHOGRAPHY MASK, MANUFACTURING METHOD THEREOF, AND PHOTOLITHOGRAPHY METHOD
(FR) MASQUE DE PHOTOLITHOGRAPHIE, SON PROCÉDÉ DE FABRICATION ET PROCÉDÉ DE PHOTOLITHOGRAPHIE
(ZH) 光刻掩膜板及其制作方法、光刻方法
Abstract: front page image
(EN)A photolithography mask, manufacturing method thereof, and photolithography method employing the photolithography mask. The photolithography mask comprises a substrate (3), a mask pattern arranged on a surface of the substrate (3), and a conductive connection pattern (2) arranged on the surface, wherein the conductive connection pattern (2) is used to electrically connect separate portions (1a, 1b, 1c, 1d) of the mask pattern together.
(FR)L'invention concerne un masque de photolithographie, son procédé de fabrication et un procédé de photolithographie dans lequel est utilisé ledit masque de photolithographie. Le masque de photolithographie comprend un substrat (3), un motif de masque disposé sur une surface du substrat (3), et un motif de connexion conducteur (2) disposé sur la surface, le motif de connexion conducteur (2) étant utilisé pour connecter électriquement des parties séparées (1a, 1b, 1c, 1d) du motif de masque.
(ZH)一种光刻掩膜板及其制作方法以及使用所述光刻掩膜板的光刻方法。光刻掩膜板包括衬底基板(3)和布置在衬底基板(3)的表面上的掩膜图案,以及布置在该表面上的导电连接图案(2),其中导电连接图案(2)用于将掩膜图案的分离部分(1a,1b,1c,1d)电气连接在一起。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)