Processing

Please wait...

Settings

Settings

Goto Application

1. WO2017197831 - SILICON THROUGH HOLE CHIP AND MANUFACTURING METHOD THEREFOR, FINGERPRINT RECOGNITION SENSOR AND TERMINAL DEVICE

Publication Number WO/2017/197831
Publication Date 23.11.2017
International Application No. PCT/CN2016/103055
International Filing Date 24.10.2016
IPC
H01L 21/768 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71Manufacture of specific parts of devices defined in group H01L21/7086
768Applying interconnections to be used for carrying current between separate components within a device
H01L 23/52 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
52Arrangements for conducting electric current within the device in operation from one component to another
G06K 9/00 2006.01
GPHYSICS
06COMPUTING; CALCULATING OR COUNTING
KRECOGNITION OF DATA; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
9Methods or arrangements for reading or recognising printed or written characters or for recognising patterns, e.g. fingerprints
CPC
G06K 9/00053
GPHYSICS
06COMPUTING; CALCULATING; COUNTING
KRECOGNITION OF DATA; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
9Methods or arrangements for reading or recognising printed or written characters or for recognising patterns, e.g. fingerprints
00006Acquiring or recognising fingerprints or palmprints
00013Image acquisition
00053Protecting the fingerprint sensor against damage caused by the finger
G06K 9/00087
GPHYSICS
06COMPUTING; CALCULATING; COUNTING
KRECOGNITION OF DATA; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
9Methods or arrangements for reading or recognising printed or written characters or for recognising patterns, e.g. fingerprints
00006Acquiring or recognising fingerprints or palmprints
00087Matching; Classification
H01L 21/561
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, ; e.g. sealing of a cap to a base of a container
56Encapsulations, e.g. encapsulation layers, coatings
561Batch processing
H01L 21/565
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, ; e.g. sealing of a cap to a base of a container
56Encapsulations, e.g. encapsulation layers, coatings
565Moulds
H01L 21/76898
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
768Applying interconnections to be used for carrying current between separate components within a device ; comprising conductors and dielectrics
76898formed through a semiconductor substrate
H01L 21/78
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
Applicants
  • 深圳市汇顶科技股份有限公司 SHENZHEN GOODIX TECHNOLOGY CO., LTD. [CN]/[CN]
Inventors
  • 吴宝全 WU, Baoquan
Agents
  • 北京龙双利达知识产权代理有限公司 LONGSUN LEAD IP LTD.
Priority Data
201620460572.219.05.2016CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) SILICON THROUGH HOLE CHIP AND MANUFACTURING METHOD THEREFOR, FINGERPRINT RECOGNITION SENSOR AND TERMINAL DEVICE
(FR) PUCE À TROU TRAVERSANT DE SILICIUM ET SON PROCÉDÉ DE FABRICATION, CAPTEUR DE RECONNAISSANCE D'EMPREINTE DIGITALE ET DISPOSITIF TERMINAL
(ZH) 硅通孔芯片及其制作方法、指纹识别传感器和终端设备
Abstract
(EN)
Provided are a silicon through hole chip and a manufacturing method therefor. The silicon through hole chip comprises a silicon substrate (210), wherein the silicon substrate (210) is provided with a through hole (220), the through hole (220) being an inclined hole, and a backfill structure layer (230) being arranged in the through hole (220). According to the silicon through hole chip and the manufacturing method therefor, the fingerprint recognition sensor and the terminal device, by adding the backfill structure layer in the through hole, a surface of the silicon through hole chip can play the function of support when subjected to a force, and the breakage of the silicon through hole chip is avoided, thereby improving the structural strength of the silicon through hole chip.
(FR)
La présente invention porte sur une puce à trou traversant de silicium et son procédé de fabrication. La puce à trou traversant de silicium comprend un substrat de silicium (210), le substrat de silicium (210) étant pourvu d'un trou traversant (220), le trou traversant (220) étant un trou incliné, et une couche de structure de remplissage (230) étant disposée dans le trou traversant (220). Selon la puce à trou traversant de silicium et son procédé de fabrication, le capteur de reconnaissance d'empreinte digitale et le dispositif terminal, en ajoutant la couche de structure de remplissage dans le trou traversant, une surface de la puce à trou traversant de silicium peut jouer le rôle de support lorsqu'elle est soumise à une force, et la rupture de la puce à trou traversant de silicium est évitée, ce qui permet d'améliorer la résistance structurale de la puce à trou traversant de silicium.
(ZH)
提供了一种硅通孔芯片及其制作方法,硅通孔芯片包括硅基板(210),硅基板(210)设置有通孔(220),通孔(220)为斜孔,通孔(220)内设置有回填结构层(230)。硅通孔芯片及其制作方法、指纹识别传感器和终端设备,通过在通孔内增加回填结构层,使得在硅通孔芯片表面受力时能够起到支撑作用,避免了硅通孔芯片的断裂,从而提高了硅通孔芯片的结构强度。
Latest bibliographic data on file with the International Bureau