Search International and National Patent Collections

1. (WO2017197683) LTPS SEMICONDUCTOR THIN-FILM TRANSISTOR-BASED GOA CIRCUIT

Pub. No.:    WO/2017/197683    International Application No.:    PCT/CN2016/085597
Publication Date: Fri Nov 24 00:59:59 CET 2017 International Filing Date: Tue Jun 14 01:59:59 CEST 2016
IPC: G09G 3/36
Applicants: WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD
武汉华星光电技术有限公司
Inventors: LI, Yafeng
李亚锋
Title: LTPS SEMICONDUCTOR THIN-FILM TRANSISTOR-BASED GOA CIRCUIT
Abstract:
An LTPS semiconductor thin-film transistor-based GOA circuit. A resistor R1 and a timing signal Reset are introduced to adjust high and low levels and the frequency of a voltage corresponding to a second node P(n). The resistor R1 and a tenth thin-film transistor T10 are employed to replace a second capacitor C2 in the prior art. One terminal of the resistor R1 is connected to a constant voltage high level VGH; the other terminal is connected to a gate terminal of a ninth thin-film transistor T9; and a source terminal of the ninth thin-film transistor T9 is electrically connected to the timing signal Reset. When an output terminal G(n) is in a stage of maintaining a low level, the level of the second node P(n) follows transitions of the timing signal Reset between high and low levels and make identical transitions between high and low levels, that is, the level of the second node P(n) is pulled down according to a certain frequency, thus effectively preventing the second node P(n) from being in the high level for an extended period of time, avoiding the problem of threshold voltage shift as a result of sixth and seventh thin-film transistors T6 and T7 working for an extended period of time, and increasing the stability of the GOA circuit.