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1. (WO2017197179) III-NITRIDE VERTICAL TRANSISTOR WITH APERTURE REGION FORMED USING ION IMPLANTATION
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2017/197179 International Application No.: PCT/US2017/032253
Publication Date: 16.11.2017 International Filing Date: 11.05.2017
IPC:
H01L 29/66 (2006.01) ,H01L 21/265 (2006.01) ,H01L 21/324 (2006.01) ,H01L 29/778 (2006.01) ,H01L 29/423 (2006.01)
Applicants: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA[US/US]; 1111 Franklin Street, Twelfth Floor Oakland, California 94607, US
Inventors: CHOWDHURY, Srabanti; US
JI, Dong; US
Agent: SAHASRABUDDHE, Laxman; US
Priority Data:
62/335,46012.05.2016US
Title (EN) III-NITRIDE VERTICAL TRANSISTOR WITH APERTURE REGION FORMED USING ION IMPLANTATION
(FR) TRANSISTOR VERTICAL À BASE DE NITRURE III DOTÉ D'UNE RÉGION D'OUVERTURE FORMÉE PAR IMPLANTATION IONIQUE
Abstract: front page image
(EN) III-nitride vertical transistors and methods of making the same are disclosed. The transistors can include aperture regions that are formed using ion implantation. The resulting transistors can have improved properties.
(FR) L'invention concerne des transistors verticaux à base de nitrure III et leurs procédés de fabrication. Ces transistors peuvent comprendre des régions d'ouverture qui sont formées par implantation ionique. Les transistors obtenus peuvent présenter des propriétés améliorées.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)