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1. (WO2017197173) SEMICONDUCTOR DIE WITH BACKSIDE INTEGRATED INDUCTIVE COMPONENT
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.:    WO/2017/197173    International Application No.:    PCT/US2017/032247
Publication Date: 16.11.2017 International Filing Date: 11.05.2017
IPC:
H01L 27/04 (2006.01), H01L 25/10 (2006.01), H01L 21/82 (2006.01)
Applicants: TEXAS INSTRUMENTS INCORPORATED [US/US]; P.O. Box 655474, Mail Station 3999 Dallas, TX 75265-5474 (US).
TEXAS INSTRUMENTS JAPAN LIMITED [JP/JP]; 24-1, Nishi-shinjuku 6-chome Shinjuku-ku, Tokyo, 160-8366 (JP) (JP only)
Inventors: COOK, Benjamin, Stassen; (US).
MASSOLINI, Roberto, Giampiero; (IT).
CAROTHERS, Daniel; (US)
Agent: DAVIS, Jr., Michael A.; (US).
PESSETTO, John, R.; (US)
Common
Representative:
TEXAS INSTRUMENTS INCORPORATED; P.O. Box 655474, Mail Station 3999 Dallas, TX 75265-5474 (US)
Priority Data:
15/152,518 11.05.2016 US
Title (EN) SEMICONDUCTOR DIE WITH BACKSIDE INTEGRATED INDUCTIVE COMPONENT
(FR) PUCE SEMI-CONDUCTRICE À COMPOSANT INDUCTIF INTÉGRÉ SUR LA FACE ARRIÈRE
Abstract: front page image
(EN)In described examples, an integrated circuit (IC) (300) includes a circuit substrate (301) having a front side surface (320) and an opposite backside surface. Active circuitry is located on the front side surface (320). An inductive structure (310) is located within a deep trench formed in the circuit substrate (301) below the backside surface. The inductive structure (310) is coupled (343, 344) to the active circuitry.
(FR)Dans des exemples de l'invention, un circuit intégré (CI) (300) comprend un substrat de circuit (301) ayant une surface latérale avant (320) et une surface arrière opposée. Un ensemble de circuits actif est situé sur la surface latérale avant (320). Une structure inductive (310) est située à l'intérieur d'une tranchée profonde formée dans le substrat de circuit (301) au-dessous de la surface arrière. La structure inductive (310) est couplée (343, 344) à l'ensemble de circuits actif.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)