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1. (WO2017196934) FLUORINATED COMPOSITIONS FOR ION SOURCE PERFORMANCE IMPROVEMENT IN NITROGEN ION IMPLANTATION

Pub. No.:    WO/2017/196934    International Application No.:    PCT/US2017/031894
Publication Date: Fri Nov 17 00:59:59 CET 2017 International Filing Date: Thu May 11 01:59:59 CEST 2017
IPC: H01J 37/02
H01J 37/317
Applicants: ENTEGRIS, INC.
Inventors: CHAMBERS, Barry Lewis
TIEN, Biing-Tsair
SWEENEY, Joseph D.
TANG, Ying
BYL, Oleg
BISHOP, Steven E.
YEDAVE, Sharad N.
Title: FLUORINATED COMPOSITIONS FOR ION SOURCE PERFORMANCE IMPROVEMENT IN NITROGEN ION IMPLANTATION
Abstract:
Compositions, methods, and apparatus are described for carrying out nitrogen ion implantation, which avoid the incidence of severe glitching when the nitrogen ion implantation is followed by another ion implantation operation susceptible to glitching, e.g., implantation of arsenic and/or phosphorus ionic species. The nitrogen ion implantation operation is advantageously conducted with a nitrogen ion implantation composition introduced to or formed in the ion source chamber of the ion implantation system, wherein the nitrogen ion implantation composition includes nitrogen (N2) dopant gas and a glitching-suppressing gas including one or more selected from the group consisting of NF3, N2F4, F2, SiF4, WF6, PF3, PF5, AsF3, AsF5, CF4 and other fluorinated hydrocarbons of CxFy (x≥1, y≥1) general formula, SF6, HF, COF2, OF2, BF3, B2F4, GeF4, XeF2, O2, N2O, NO, NO2, N2O4, and O3, and optionally hydrogen-containing gas, e.g., hydrogen-containing gas including one or more selected from the group consisting of H2, NH3, N2H4, B2H6, AsH3, PH3, SiH4, Si2H6, H2S, H2Se, CH4 and other hydrocarbons of CxHy (x≥1, y≥1) general formula and GeH4.