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1. (WO2017196835) HETEROJUNCTION SCHOTTKY GATE BIPOLAR TRANSISTOR
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Pub. No.: WO/2017/196835 International Application No.: PCT/US2017/031742
Publication Date: 16.11.2017 International Filing Date: 09.05.2017
IPC:
H01L 29/66 (2006.01) ,H01L 21/02 (2006.01) ,H01L 31/101 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
in which radiation controls flow of current through the device, e.g. photoresistors
10
characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
101
Devices sensitive to infra-red, visible or ultra-violet radiation
Applicants:
QATAR UNIVERSITY [QA/QA]; Office of Academic Research P.O. Box 2713 Doha, QA
TEXAS A&M UNIVERSITY SYSTEM [US/US]; 3369 TAMU College Station, Texas 77843-3369, US
Inventors:
RATCHA, Aditya Chandra Sai; US
VERMA, Amit; US
NEKOVEI, Reza; US
KHADER, Mahmoud M.; QA
Agent:
ADAMS, Christopher; US
CHAO, Aborn; US
KOLO, Lacy; US
Priority Data:
15/149,97909.05.2016US
Title (EN) HETEROJUNCTION SCHOTTKY GATE BIPOLAR TRANSISTOR
(FR) TRANSISTOR BIPOLAIRE À GRILLE SCHOTTKY À HÉTÉROJONCTION
Abstract:
(EN) Certain embodiments of the present invention may be directed to a transistor structure. The transistor structure may include a semiconductor substrate. The semiconductor substrate may include a drift region, a collector region, an emitter region, and a lightly-doped/undoped region. The lightly-doped/undoped region may be lightly-doped and/or undoped. The transistor structure may also include a heterostructure. The heterostructure forms a heterojunction with the lightly-doped/undoped region. The transistor structure may also include a collector terminal. The collector terminal is in contact with the collector region. The transistor structure may also include a gate terminal. The gate terminal is in contact with the heterostructure. The transistor structure may also include an emitter terminal. The emitter terminal is in contact with the lightly-doped/undoped region and the emitter region.
(FR) Selon certains modes de réalisation, la présente invention peut concerner une structure de transistor. La structure de transistor peut comprendre un substrat semi-conducteur. Le substrat semi-conducteur peut comprendre une zone de migration, une zone de collecteur, une zone d'émetteur et une zone faiblement dopée/non dopée. La zone faiblement dopée/non dopée peut être faiblement dopée et/ou non dopée. La structure de transistor peut également comprendre une hétérostructure. L'hétérostructure forme une hétérojonction avec la zone faiblement dopée/non dopée. La structure de transistor peut également comprendre une borne de collecteur. La borne de collecteur est en contact avec la zone de collecteur. La structure de transistor peut également comprendre une borne de grille. La borne de grille est en contact avec l'hétérostructure. La structure de transistor peut également comprendre une borne d'émetteur. La borne d'émetteur est en contact avec la zone faiblement dopée/non dopée et la zone d'émetteur..
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)